There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Solid-state electrolytes are attracting increasing interest for electrochemical energy storage technologies. In this Review, we provide a background overview and discuss the state of the art, ion-transport mechanisms and fundamental properties of solid-state electrolyte materials of interest for energy storage applications. We focus on recent advances in various classes of battery chemistries and systems that are enabled by solid electrolytes, including all-solid-state lithium-ion batteries and emerging solid-electrolyte lithium batteries that feature cathodes with liquid or gaseous active materials (for example, lithium–air, lithium–sulfur and lithium–bromine systems). A low-cost, safe, aqueous electrochemical energy storage concept with a ‘mediator-ion’ solid electrolyte is also discussed. Advanced battery systems based on solid electrolytes would revitalize the rechargeable battery field because of their safety, excellent stability, long cycle lives and low cost. However, great effort will be needed to implement solid-electrolyte batteries as viable energy storage systems. In this context, we discuss the main issues that must be addressed, such as achieving acceptable ionic conductivity, electrochemical stability and mechanical properties of the solid electrolytes, as well as a compatible electrolyte/electrode interface. This Review details recent advances in battery chemistries and systems enabled by solid electrolytes, including all-solid-state lithium-ion, lithium–air, lithium–sulfur and lithium–bromine batteries, as well as an aqueous battery concept with a mediator-ion solid electrolyte.

Lithium battery chemistries enabled by solid-state electrolytes

The science and technology of ultracapacitors are reviewed for a number of electrode materials, including carbon, mixed metal oxides, and conducting polymers. More work has been done using microporous carbons than with the other materials and most of the commercially available devices use carbon electrodes and an organic electrolytes. The energy density of these devices is 3¯5 Wh/kg with a power density of 300¯500 W/kg for high efficiency (90¯95%) charge/discharges. Projections of future developments using carbon indicate that energy densities of 10 Wh/kg or higher are likely with power densities of 1¯2 kW/kg. A key problem in the fabrication of these advanced devices is the bonding of the thin electrodes to a current collector such the contact resistance is less than 0.1 cm2. Special attention is given in the paper to comparing the power density characteristics of ultracapacitors and batteries. The comparisons should be made at the same charge/discharge efficiency.

Ultracapacitors: Why, How, and Where is the Technology

羟氨苄青霉素引起大疱性类天疱疮样疹

Note: Times Cited: 875 Reference EPFL-ARTICLE-206025doi:10.1021/cr0501846View record in Web of Science URL: ://WOS:000249839900009 Record created on 2015-03-03, modified on 2017-05-12

Complex Hydrides for Hydrogen Storage

Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×1013 eV−1·cm−2. Al2O3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.

/pdf/investigation-of-trap-states-in-high-al-content-algan-gan-1u9wft3734.pdf

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Periodical silver nanoparticle (NP) arrays were fabricated by magnetron sputtering method with anodic aluminum oxide templates to enhance the UV light emission from ZnO by the surface plasmon resonance effect. Theoretical simulations indicated that the surface plasmon resonance wavelength depended on the diameter and space of Ag NP arrays. By introducing Ag NP arrays with the diameter of 40 nm and space of 100 nm, the photoluminescence intensity of the near band-edge emission from ZnO was twofold enhanced. Time-resolved photoluminescence measurement and energy band analysis indicated that the UV light emission enhancement was attributed to the coupling between the surface plasmons in Ag NP arrays and the excitons in ZnO with the improved spontaneous emission rate and enhanced local electromagnetic fields.

/pdf/enhanced-uv-emission-from-zno-on-silver-nanoparticle-arrays-4o7b7l7o9e.pdf

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect.

Postgate annealing (PGA) in N2/O2 atmosphere at 300 °C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of $\sim 10^{-13}$ A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of $\sim 10^{12}$ . At 250 °C, the device still exhibits a low OFF-state leakage current of $\sim 10^{-9}$ A/mm and high ON/OFF current ratio of $\sim 10^{8}$ . Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFF-state leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al2O3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA.

Xiaohua Ma

Papers

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect.

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

Performance of Surface‐Oxidized Ni3B, Ni2B, and NiB2 Electrocatalysts for Overall Water Splitting

Manipulation of microstructure of MXene aerogel via metal ions-initiated gelation for electromagnetic wave absorption.