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Yishay Feldman

Researcher at Weizmann Institute of Science

Publications -  141
Citations -  7626

Yishay Feldman is an academic researcher from Weizmann Institute of Science. The author has contributed to research in topics: Nanoparticle & X-ray photoelectron spectroscopy. The author has an hindex of 38, co-authored 130 publications receiving 7007 citations. Previous affiliations of Yishay Feldman include London Centre for Nanotechnology & Hebrew University of Jerusalem.

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Studies of minority carrier diffusion length increase in p-type ZnO:Sb

TL;DR: A thermally induced increase of electron diffusion length was determined to have an activation energy of 184±10meV in p-type Sb-doped ZnO as a function of temperature using the electron beam induced current technique as discussed by the authors.
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Defect and Ordered Tungsten Oxides Encapsulated Inside 2H–WX2(X=S and Se) Fullerene-Related Structures

TL;DR: In this article, complex tungsten oxides, consisting of nonstoichiometric oxides of the form WO 3−x and stoichiometric lamellar oxides with the form {001} R W n O 3 n −1 (n = 3 to 6) have been observed incorporated within 2H-W X 2 (X =S or Se) inorganic fullerene-like (IF) structures by HRTEM.
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Na effects on CuInSe2: Distinguishing bulk from surface phenomena

TL;DR: In this paper, the effect of sodium on the performance of CuInSe2-based solar cells has been investigated using secondary ion mass spectroscopy, x-ray photoelectron spectroscopic (XPS) and other complementary physical characterization methods, which indicate that after exposure to an external Na source, no significant amounts of sodium, beyond the residual amount, found in as-grown samples, enter intact crystals, except via defects such as grain boundaries.
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Fullerene-like Mo(W)(1-x)Re(x)S2 nanoparticles.

TL;DR: XPS results confirm the IF-Mo(W)(1-x)Re(x)S(2) nanoparticles to be more n-type arising from the effect of Re doping, and density-functional tight-binding (DFTB) calculations support the observed n- type behavior.
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Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior.

TL;DR: An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X, which has immediate implications for interface band alignment and sensing.