Youdou Zheng

TL;DR: In this paper, the authors achieved significantly enhanced avalanche ruggedness and surge current capability in GaN junction barrier Schottky (JBS) diode for highly reliable power operation.

TL;DR: In this article, the photoresponse spectra of InGaN metal-insulator-semiconductor (MIS) photodetectors with two different insulating layers of Si3N4 and Al2O3 deposited via plasma-enhanced chemical vapor deposition and atomic layer deposition, respectively, were investigated in order to determine the difference in photoresponse.

TL;DR: In this article, the k·p perturbation theory was adopted to explore this situation, simulating the transitions from conduction subbands to valence subbands and their corresponding optical momentum matrix elements at/around Γ point under the in-plane asymmetric strain.

TL;DR: In this paper, the authors systematically synthesized CH 3 NH 3 PbI 3 crystals using solvothermal process, and the reaction conditions such as concentration of the precursor, temperature, time, and lead source have been comprehensively investigated to obtain shape-controlled CH 3NH 3PbI3 crystals.

TL;DR: In this paper, the mobility of the two-dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields.