Youdou Zheng

TL;DR: In this paper, the authors used Auger Electron Spectroscopy to detect the Ge composition in the SiGe layers and found that the ge composition is not uniform in strained SiGe layer.

TL;DR: In this article, stress-free InN nanowires (NWs) have been grown on Au/graphene/GaN/sapphire substrate by atmospheric pressure metal-In sublimation method.

TL;DR: In this paper , a device configuration exploration combining the p-NiO x gate cap layer and a thin AlGaN barrier layer is presented, where a nitrogen based post-annealing process is developed to improve the film stoichiometry for elevated gate controllability, realizing normally off operation with enhanced channel conduction capability.

TL;DR: In this article, the switching kinetics characteristics of interface traps in n-metal-oxide-semiconductor field effect transistors (n-MOSFETs) with ultra-narrow channels were investigated.

TL;DR: In this paper, the authors compared the performance of 4H-SiC n-i-p and p-n APDs in terms of the single photon counting efficiency, and found that the single-photon counting efficiency of n-p APDs is considerably higher than that of p-i n APDs.