Youdou Zheng

TL;DR: In this paper, a continuous mesoporous iron oxide nanofilm was directly formed on graphene nanosheets through the in situ thermal decomposition of Fe(NO3)3·9H2O and was anchored tightly on the graphene surface.

TL;DR: In this paper, a better tradeoff between fast reverse-recovery and rugged surge-current capability has been demonstrated in NiO/Ga2O3 p-n heterojunction diodes (HJDs).

TL;DR: In this article, the performance of 4H-SiC avalanche photodiodes working in Geiger mode is studied for the first time, and the maximum quantum efficiency of the APD increases from 53.4% at 290 nm to 63.3% at 295 nm as temperature rises from room temperature to 150 °C.

TL;DR: Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IgZO layer sandwiched at the channel/gate dielectric interface are fabricated in this article, which shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress.

TL;DR: In this article, the carrier transport and gain mechanisms are exploited in the Ga2O3-based metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts.