Youdou Zheng

TL;DR: In this article, the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al2O3 substrate was synthesized, and X-ray diffraction (XRD) spectra showed that as the reaction proceeds, ZnAl 2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation.

TL;DR: In this article, the higher order bands of the infrared active defect were investigated at different temperatures in fast neutron irradiated silicon and it was found that the optically active decay follows logarithmic time dependence with a decay time of about 105 s, which is nearly temperature independent below 80 K. The residual absorption remains up to heating temperatures of 180 K.

TL;DR: In this paper, a fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology, which is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaNnanorods with a relatively high purity and at a low cost.

TL;DR: Based on the doping profile design and edge electric field modulation in the pn junction, over 10 kA/cm2 current handling capability in both forward and reverse direction has been achieved as discussed by the authors .

TL;DR: In this article, a planar lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase phase epitaxial (MOVPE), using Diethyl gallium chloride, (C2H5)2GaCl, as the MOVPE Ga precursor.