Y
Youdou Zheng
Researcher at Nanjing University
Publications - 557
Citations - 7057
Youdou Zheng is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemical vapor deposition & Photoluminescence. The author has an hindex of 31, co-authored 493 publications receiving 5015 citations. Previous affiliations of Youdou Zheng include Xiamen University.
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Journal ArticleDOI
Preparation of β-Ga2O3 films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors
Yuxia Zhu,Yue-Wen Li,Xiangqian Xiu,Xinyu Sun,Zili Xie,Tao Tao,Peng Chen Chen,Bin Liu,Jiandong Ye,Rong Zhang,Youdou Zheng +10 more
TL;DR: In this article , the effects of off-angled sapphire substrates on the surface morphology and crystal quality of β-Ga2O3 films have been systematically investigated, and the results indicate that to some extent the larger off-angle substrate could lead to the smoother surface morphology, which may result in a higher crystal quality.
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Segregations and desorptions of Ge atoms in nanocomposite Si 1-x Ge x films during high-temperature annealing
TL;DR: In this article, the segregation and desorption of Ge atoms in Si1−x Ge x films were investigated by dual-source jet-type inductively coupled plasma chemical vapor deposition (ICPCVD).
Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability
Feng Zhou,Weizong Xu,Yulei Jin,Tian Pei Zhou,Fang-Fang Ren,Dong-Yi Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Haixia Liu +9 more
TL;DR: In this paper , the robustness of AlGaN/GaN Schottky barrier diodes (SBDs) was demonstrated for inductive transient shocks in power switching applications.
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Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor
TL;DR: In this paper, the authors developed an LED thermal resistance and thermal interface material evaluation method using LEDs with an internal sensor unit by both steady-state and transient thermal measurements, which used low-cost equipment, while realizing improved accuracy.
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Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering
TL;DR: In this article, the temperature-dependent stress state in the barrier layer of AlGaN/GaN heterostructures grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering.