Y
Youdou Zheng
Researcher at Nanjing University
Publications - 557
Citations - 7057
Youdou Zheng is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemical vapor deposition & Photoluminescence. The author has an hindex of 31, co-authored 493 publications receiving 5015 citations. Previous affiliations of Youdou Zheng include Xiamen University.
Papers
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Optical properties of GaN film grown by metalorganic chemical vapor deposition
Rong Zhang,K. Yang,L. H. Qin,B. Shen,H. T. Shi,Yi Shi,Shulin Gu,Youdou Zheng,Z. C. Huang,J. C. Chen +9 more
TL;DR: The room temperature optical properties of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition are reported in this article, where the energy gap was determined as 3.39 and 3.400 eV by optical transmission and photoreflectance, respectively, and the refractive index of GaN film as the function of photon energy was obtained.
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First-principles insights on the electronic and optical properties of ZnO@CNT core@shell nanostructure
Yang Shen,Xiaodong Yang,Yue Bian,Kui-Ying Nie,Songmin Liu,Kun Tang,Rong Zhang,Youdou Zheng,Shulin Gu +8 more
TL;DR: Calculation results suggest that the ZnO nanowire encapsulated in (9, 9)-CNT is the most stable structure from the view of formation energy.
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Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys
Jing Li,Jiandong Ye,Jiandong Ye,Fang-Fang Ren,Fang-Fang Ren,Dongming Tang,Yi Yang,Kun Tang,Shulin Gu,Rong Zhang,Youdou Zheng +10 more
TL;DR: The reproducible capability of implantation and laser annealing at selective area enable the realization of high efficient lateral junction solar cells, which can ensure extreme light trapping and efficient charge separation.
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Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xSix/Si heteronanocrystals
TL;DR: In this paper, the charge storage characteristics in the metal-oxide-semiconductor memory structure based on gradual Ge1−x6∕Si heteronanocrystals (HNCs) were investigated by using capacitance-voltage measurements.
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Spatially localised luminescence emission properties induced by formation of ring‐shaped quasi‐potential trap around V‐pits in InGaN epi‐layers
Tao Tao,Ting Zhi,Bin Liu,Yi Li,Zhe Zhuang,Zili Xie,Dunjun Chen,Peng Chen,Rong Zhang,Youdou Zheng +9 more
TL;DR: The correlation between surface structural and luminescence properties of InGaN epi-layers grown by metal organic chemical vapour deposition has been investigated in this paper, where ring-shaped regions with high In-content are observed around V-pits by spatial resolved cathodoluminescence and energy dispersive X-ray spectroscopy.