Y
Youdou Zheng
Researcher at Nanjing University
Publications - 557
Citations - 7057
Youdou Zheng is an academic researcher from Nanjing University. The author has contributed to research in topics: Chemical vapor deposition & Photoluminescence. The author has an hindex of 31, co-authored 493 publications receiving 5015 citations. Previous affiliations of Youdou Zheng include Xiamen University.
Papers
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Journal ArticleDOI
Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors.
Qijing Wang,Qijing Wang,Sai Jiang,Longbin Qiu,Jun Qian,Luis K. Ono,Matthew R. Leyden,Xinran Wang,Yi Shi,Youdou Zheng,Yabing Qi,Yun Li +11 more
TL;DR: Flat-lying molecular monolayers that exhibit good uniformity and high crystallinity at the semiconductor/dielectric interface, deposited through slow thermal evaporation are reported, providing a promising strategy for enhancing the performance of OFETs by using interfacial flat-lyingmonolayers.
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Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors
TL;DR: In this paper, a 13.5-pair Al0.98In0.77Ga0.23N distributed Bragg reflector (DBR) was grown by molecular beam epitaxy on an AlN template substrate.
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Arrays of GaN nano-pillars fabricated by nickel nano-island mask
Lin Zengqin,Xiangqian Xiu,Shiying Zhang,Hua Xuemei,Zili Xie,Rong Zhang,Ping Han,Youdou Zheng +7 more
TL;DR: In this paper, a uniform distributed GaN nano-pillars have been successfully fabricated by inductively coupled plasma etching using self-organized Nickel nano-islands mask on GaN film.
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High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation
TL;DR: In this article, a beveled mesa 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with partial trench isolation is reported, and the performance of the APD does not degrade compared with the traditional full trench isolation structure.
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Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition
Chengxiang Liu,Zili Xie,Ping Han,Bin Liu,Liang Li,Jun Zou,Shengming Zhou,Li Hui Bai,Zhang Hai Chen,Rong Zhang,Youdou Zheng +10 more
TL;DR: In this paper, the m-plane GaN epilayers have been grown on LiAlO2 (1.0) substrate by a two-step growth method using a metal-organic chemical vapor deposition (MOCVD) system.