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Yu-Hsiu Chen
Researcher at National Tsing Hua University
Publications - 6
Citations - 1099
Yu-Hsiu Chen is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 6, co-authored 6 publications receiving 1011 citations.
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Proceedings ArticleDOI
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
Hong-Ji Lee,Pang-Shiu Chen,Tain-Shun Wu,Yu-Hsiu Chen,Ching-Hua Wang,P.J. Tzeng,C. H. Lin,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +9 more
TL;DR: In this paper, a novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mum CMOS technology, which uses a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, and excellent memory performances such as low operation current (down to 25 muA), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (>106 cycles) have been demonstrated in the memory device.
Proceedings ArticleDOI
Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance
Hong-Ji Lee,Yu-Hsiu Chen,P. S. Chen,P. Y. Gu,Y. Y. Hsu,S. M. Wang,W. H. Liu,C. H. Tsai,Shyh-Shyuan Sheu,P. C. Chiang,W. P. Lin,C. H. Lin,W. S. Chen,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +15 more
TL;DR: In this article, a modified bottom electrode is proposed for the memory device to maintain the memory window and to endure resistive switching up to 1010 cycles, and the performance of the HfO X-based bipolar resistive memory was improved.
Journal ArticleDOI
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
H. Y. Lee,Yu-Hsiu Chen,Pang-Shiu Chen,Tai-Yuan Wu,Feng Chen,Ching-Chiun Wang,Pei-Jer Tzeng,M.-J. Tsai,Chiu-Wang Lien +8 more
TL;DR: In this paper, the memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing.
Journal ArticleDOI
High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology
Chih-Chao Yang,Wen-Hsien Huang,Tung Ying Hsieh,Tsung-Ta Wu,Hsing-Hsiang Wang,Chang-Hong Shen,Wen-Kuan Yeh,Jung-Hau Shiu,Yu-Hsiu Chen,Meng-Chyi Wu,Jia-Min Shieh +10 more
TL;DR: In this article, a tri-gate nanowire poly-Si FET with embedded source/drain (e-S/D) and back gate was demonstrated, and the highly crystallized channel was fabricated by green nanosecond laser crystallization, chemical mechanical polish, and postsurface modification processes.
Proceedings ArticleDOI
Enabling monolithic 3D image sensor using large-area monolayer transition metal dichalcogenide and logic/memory hybrid 3D + IC
Chih-Chao Yang,Kuan-Chang Chiu,Cheng-Tse Chou,Chang-Ning Liao,Meng-Hsi Chuang,Tung-Ying Hsieh,Wen-Hsien Huang,Chang-Hong Shen,Jia-Min Shieh,Wen-Kuan Yeh,Yu-Hsiu Chen,Meng-Chyi Wu,Yi-Hsien Lee +12 more
TL;DR: In this paper, a monolithic 3D image sensor is demonstrated by sequentially fabricating large-area (>2cm×2cm) monolayer (20A/W) TMD phototransistor array on logic/memory hybrid 3D+IC.