Z
Zhiqiang Wang
Researcher at University of Tennessee
Publications - 38
Citations - 1837
Zhiqiang Wang is an academic researcher from University of Tennessee. The author has contributed to research in topics: Gate driver & Power semiconductor device. The author has an hindex of 21, co-authored 38 publications receiving 1467 citations. Previous affiliations of Zhiqiang Wang include Zhejiang University & National Transportation Research Center.
Papers
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Journal ArticleDOI
A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules
TL;DR: In this paper, an active gate driver (AGD) was proposed for IGBT modules to improve their overall performance under normal condition as well as fault condition, which has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turnoff transient without sacrificing current and voltage stress.
Journal ArticleDOI
Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
Zhiqiang Wang,Xiaojie Shi,Leon M. Tolbert,Fred Wang,Zhenxian Liang,Daniel Costinett,Benjamin J. Blalock +6 more
TL;DR: In this paper, the authors present a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
TL;DR: A novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed and a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.
Journal ArticleDOI
Characteristic Investigation and Control of a Modular Multilevel Converter-Based HVDC System Under Single-Line-to-Ground Fault Conditions
TL;DR: In this article, the analysis and control of a multilevel modular converter (MMC)-based HVDC transmission system under three possible single-line-to-ground fault conditions, with special focus on the investigation of their different fault characteristics.
Journal ArticleDOI
A High-Temperature SiC Three-Phase AC - DC Converter Design for > 100/spl deg/C Ambient Temperature
Ruxi Wang,Dushan Boroyevich,Puqi Ning,Zhiqiang Wang,Fei Wang,Paolo Mattavelli,Khai D. T. Ngo,Kaushik Rajashekara +7 more
TL;DR: In this article, a detailed design process for an HT SiC three-phase PWM rectifier that can operate at ambient temperatures above 100°C is described, and an edge-triggered HT gate drive is also proposed to drive the designed power module.