Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
Zhiqiang Wang,Xiaojie Shi,Leon M. Tolbert,Fred Wang,Zhenxian Liang,Daniel Costinett,Benjamin J. Blalock +6 more
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In this paper, the authors present a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs.Abstract:
This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 °C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 °C. The experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.read more
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Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Ajay Kumar Morya,Matthew C. Gardner,Bahareh Anvari,Liming Liu,Alejandro G. Yepes,Jesus Doval-Gandoy,Hamid A. Toliyat +6 more
TL;DR: The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt, and the reliability of WBG devices are discussed.
Journal ArticleDOI
A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
G. Romano,Asad Fayyaz,Michele Riccio,Luca Maresca,Giovanni Breglio,Alberto Castellazzi,Andrea Irace +6 more
TL;DR: In this paper, the behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated and two different SC failure phenomena are thoroughly reported.
Journal ArticleDOI
Overview of high voltage sic power semiconductor devices: development and application
Shiqi Ji,Zheyu Zhang,Fred Wang +2 more
TL;DR: In this paper, the development and status of high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years, and the technologies and challenges for HV SiC device application in converter design are discussed.
Journal ArticleDOI
Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors
Diane-Perle Sadik,Juan Colmenares,Georg Tolstoy,Dimosthenis Peftitsis,Mietek Bakowski,Jacek Rabkowski,Hans-Peter Nee +6 more
TL;DR: In this paper, a transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET.
References
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TL;DR: In this paper, a compilation of non-irradiated and irradiated properties of SiC are provided and reviewed and analyzed in terms of application to TRISO fuels, specifically in the high-temperature irradiation regime.
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SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
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Present Status and Future Trends in Electric Vehicle Propulsion Technologies
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Journal ArticleDOI
Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
TL;DR: In this paper, it is shown that silicon carbide (SiC) power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities.
Journal ArticleDOI
A discussion on IGBT short-circuit behavior and fault protection schemes
R. Chokhawala,J. Catt,L. Kiraly +2 more
TL;DR: In this article, the problem of providing short-circuit protection in relation to the special characteristics of the most efficient IGBTs is discussed and the pros and cons of some of the existing protection circuits are discussed and, based on the recommendations, a protection scheme is implemented.