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Institution

Nanchang Hangkong University

EducationNanchang, China
About: Nanchang Hangkong University is a education organization based out in Nanchang, China. It is known for research contribution in the topics: Microstructure & Alloy. The organization has 7004 authors who have published 5270 publications receiving 62162 citations. The organization is also known as: Nanchang Aviation University.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors review the recent advances in organic hole transport layer (HTL) materials in single-junction organic solar cells and systematically discuss the relationships between the structure and properties of various HTL materials, and highlight the design rules of HTL material for highly efficient and stable OSCs.
Abstract: As a new generation of solid-state film cells, organic solar cells (OSCs) have become the research focus in the field of renewable energy sources, and the reported power conversion efficiencies (PCEs) have been boosted to 18%. Hole transport layer (HTL) materials, a critical component of OSCs, exert a tremendous impact on the PCE and stability of OSCs. At present, the HTL materials used in OSCs can be divided into two main categories, which are inorganic HTL materials and organic HTL materials. Although, OSCs with inorganic HTL materials can achieve satisfactory PCE, they are not suitable for large-scale commercial roll-to-roll production due to the unavoidable process of high-temperature vacuum evaporation. Recently, a great number of organic HTL materials have been designed, synthesized, and successfully applied in OSCs. Herein, we review the recent advances in organic HTL materials in single-junction OSCs and systematically discuss the relationships between the structure and properties of various HTL materials, and highlight the design rules of HTL materials for highly efficient and stable OSCs.

87 citations

Journal ArticleDOI
TL;DR: The results indicate that ternary rGO/SnS2/ZnFe2O4 composites have good prospect in practical removal of organic pollutants in wastewater due to high efficiency and excellent stability.

86 citations

Journal ArticleDOI
TL;DR: In this paper, a 2D AgInS2/SnIn4S8 heterojunctions were fabricated by one-step hydrothermal method and showed enhanced visible-light photocatalytic activity.
Abstract: •2D AgInS2/SnIn4S8 heterojunctions were fabricated by one-step hydrothermal method.•AgInS2/SnIn4S8 shows enhanced visible-light photocatalytic activity.•AgInS2/SnIn4S8 can treat real pharmaceutical industry wastewater effectively.•AgInS2/SnIn4S8 heterojunctions can maintain long-term activity.

86 citations

Journal ArticleDOI
TL;DR: In this paper, two crystal structures, FCC and BCC, are identified in CoCrCuxFeMoNi high entropy alloys, and the valence electron concentration (VEC) values range for the formation of mixture of FCC structures can be enlarged to 6.87-8.35 based on the study.
Abstract: (Fe, Co, Ni) rich dendrites nucleate primarily in CoCrFeMoNi and CoCrCu0.1FeMoNi alloys, followed by peritetic and eutectic reactions. The quasi-peritectic reaction occurs between the primary Mo-rich dendrites and liquids in the CoCrCu0.3FeMoNi melts, and transfers to a eutectic coupled-growth at the edge of the quasi-peritectic structure. Subsequently, eutectic reaction happens in the remnant liquids. Liquid-phase separations have occurred in CoCrCuxFeMoNi alloys when x≥0.5. Meanwhile, some nanoscale precipitates are obtained in the Cu-rich region. Two crystal structures, FCC and BCC, are identified in CoCrCuxFeMoNi high entropy alloys. Amazingly, a pretty high plastic strain (51.6%) is achieved in CoCrCu0.1FeMoNi alloy when the compressive strength reaches to 3012 Mpa. With the increase of Cu content, atomic size difference (ΔR) and electro-negativity difference (ΔX) decrease while valence electron concentration (VEC), mixing enthalpy (ΔH) and mixing entropy (ΔS) increase. Consequently, the valence electron concentration (VEC) values range for the formation of mixture of FCC and BCC structures can be enlarged to 6.87–8.35 based on the study of this paper. It is the positive enthalpies of mixing that causes the liquid-phase separation in CoCrCuxFeMoNi high entropy alloys.

86 citations

Journal ArticleDOI
TL;DR: In this paper, Nanocrystalline GdNbO4:Tm3+ and GdnbO 4:Dy3+ phosphors were prepared through a Pechini-type sol gel process.
Abstract: Nanocrystalline GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors were prepared through a Pechini-type sol gel process. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD reveals that the samples begin to crystallize at 900 degrees C and the pure GdNbO4 phase can be obtained at 1000 degrees C. FE-SEM images indicate that the GdNbO4:Tm3+ and GdNbO4:Dy3+ samples consist of fine and spherical grains with a size around 30-50 nm. Under the excitation of UV light (264 nm) and low-voltage electron beams (1-3 kV), the GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors showed the characteristic emissions of Tm3+ (D-1(2) -> H-3(6), H-3(5), H-3(4), and (1)G(4) -> H-3(6) transitions) and Dy3+ (F-4(9/2) -> H-6(15/2) and F-4(9/2) -> H-6(13/2) transitions), respectively. The blue CL of the GdNbO4:Tm3+ phosphor has higher color purity and comparable intensity to the Y2SiO5:Ce3+ commercial product. A single-composition white light emitting in response to near UV and low-voltage electron beam excitation has been realized in GdNbO4:Dy3+ phosphor. The obtained GdNbO4:Tm3+ and GdNbO4:Dy3+ phosphors have potential applications in the areas of near UV white-light-emitting diodes and field emission display devices.

86 citations


Authors

Showing all 7046 results

NameH-indexPapersCitations
Jinghong Li11246548474
Chi Zhang88154538876
Feng Ding8548520354
Zhongping Chen8174224249
Xiaoming Liu7874524988
Lin Guo7741418999
Zhenhai Wen7326718380
Tong Wu6659119325
Xin Lu6337113739
Junwang Tang6222316059
Chak Tong Au6129812525
Qiang Liu6065220634
Shenglian Luo6018210509
Guo-Cong Guo6043912268
Paul L. Rosin5939113094
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202327
202296
2021614
2020507
2019470
2018386