Institution
Velagapudi Ramakrishna Siddhartha Engineering College
About: Velagapudi Ramakrishna Siddhartha Engineering College is a based out in . It is known for research contribution in the topics: Computer science & Antenna (radio). The organization has 1307 authors who have published 1155 publications receiving 6163 citations.
Topics: Computer science, Antenna (radio), Fiber, Cloud computing, Deep learning
Papers published on a yearly basis
Papers
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01 Jan 2018TL;DR: Every citizen or voter of India is allowed to exercise their right to express their choices regarding specific issues, pieces of legislation, citizen initiatives, constitutional amendments, recalls and/or to choose their government and political representative's through casting their votes.
Abstract: Every citizen or voter of India is allowed to exercise their right to express their choices regarding specific issues, pieces of legislation, citizen initiatives, constitutional amendments, recalls and/or to choose their government and political representative's through casting their votes. To allow the exercise of this right, almost all voting systems include the following steps: voter identification and authentication, voting and recording of votes cast, vote counting, publication of election results. Voter identification is required during electoral process. Security is a heart of e-voting process. Therefore the necessity of designing a secure e-voting process is very important. A secured electronic voting machine using unique identification number i.e. AADHAR number has been developed. To provide additional security along with the AADHAR number biometric identification is used. At the time of voting in the elections, the voter authentication can be done through biometric pattern. If the biometric information of the voter matches the database of the AADHAR then the person is allowed to cast their vote. Transparency is additional advantage for the above system.
6 citations
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TL;DR: In this paper, the impact of heat and mass transfer effects on an MHD flow past an inclined porous plate in the presence of a chemical reaction is investigated, where momentum, energy and concentration equations are derived as coupled second order partial differential equations.
Abstract: Abstract The impact of heat and mass transfer effects on an MHD flow past an inclined porous plate in the presence of a chemical reaction is investigated in this study. An effort has been made to explain the Soret effect and the influence of an angle of inclination on the flow field, in the presence of the heat source, chemical reaction and thermal radiation. The momentum, energy and concentration equations are derived as coupled second order partial differential equations. The model is non-dimensionalized and shown to be controlled by a number of dimensionless parameters. The resulting dimensionless partial differential equations can be solved by using a closed analytical method. Numerical results for pertaining parameters, such as the Soret number (Sr), Grashof number (Gr) for heat and mass transfer, the Schmidt number (Sc), Prandtl number (Pr), chemical reaction parameter (Kr), permeability parameter (K), magnetic parameter (M), skin friction (τ), Nusselt number (Nu) and Sherwood number (Sh) on the velocity, temperature and concentration profiles are presented graphically and discussed qualitatively.
6 citations
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01 Jan 2018TL;DR: A new threshold for the removal of Ocular Artifacts (OA) from single channel EEG based on Empirical Mode Decomposition (EMD) inspired by Wavelet Thresholding that yields a relatively cleaner EEG signals.
Abstract: Electroencephalogram (EEG) is bioelectric signal, which represents the brain activity and usually contaminated with artifacts due to movements of eye, heart, muscles and power line interference. Among these, artifacts due to Ocular Activity make the analysis difficult. This paper presents a new threshold for the removal of Ocular Artifacts (OA) from single channel EEG based on Empirical Mode Decomposition (EMD) inspired by Wavelet Thresholding that yields a relatively cleaner EEG signals. Unlike the conventional EMD based EEG denoising techniques, that neglects the higher order low frequency Intrinsic Mode Functions (IMFs) EMD Interval Thresholding (EMD-IT) and Iterative EMD Interval Thresholding (EMD-IIT) is opted to correct the artifacts. Computations are carried out using EEG Motor Movement/Imagery (eegmmidb) dataset and compare the performance of Proposed Threshold (PT) with current threshold functions i.e., Universal Threshold (UT) and Statistical Threshold (ST) using several standard performance metrics: Change in SNR (ΔSNR), Artifact Rejection Ratio (ARR), Correlation Coefficient (CC) and Root Mean Square Error (RMSE). Results of these studies reveal that the EMD-IT with PT can effectively remove the OAs from EEG signals and maintaining the background neural activity in non artifact zones intact in contrast with those of existing ones.
6 citations
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TL;DR: In this paper, the Schottky diodes' potential barrier lowering under UV illumination, and it was associated with the change in carrier density and desorption of adsorbed oxygen on the ZnO surface.
6 citations
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TL;DR: It has been demonstrated that the steep slope characteristics of TFETs enable both TGLA and ITGLA designs to display improved energy efficiency and reliability characteristics (in the form of reduced overshoot, reduced glitches, improved logic swing, etc.).
Abstract: Designing reliable and energy-efficient circuits with CMOS technology scaling is a pressing challenge at scaled supply voltages. This paper provides design insights and circuit interaction approach with two such emerging devices, double-gate FinFETs and tunnel field effect transistors (TFETs), for designing basic computing building blocks such as adder cells. At the circuit level, TFET-based transmission gate logic 1-bit full adder (TGLA) and improved transmission gate logic 1-bit full adder (ITGLA) cells have been proposed and designed taking into unidirectional conduction and ambipolar currents of TFETs into consideration. The performance of TFET designs has been benchmarked with 20 nm double-gate Si FinFET technology. ITGLA design is a better energy-efficient option in comparison to TGLA design with FinFETs but has reduced reliability. It has been demonstrated that the steep slope characteristics of TFETs enable both TGLA and ITGLA designs to display improved energy efficiency and reliability c...
6 citations
Authors
Showing all 1307 results
Name | H-index | Papers | Citations |
---|---|---|---|
Sanjay Kumar Shukla | 24 | 212 | 2295 |
Praveen V. Naidu | 15 | 51 | 479 |
Rizwan Patan | 15 | 69 | 719 |
A.V. Ratna Prasad | 14 | 28 | 1166 |
M. Srinivas | 14 | 40 | 428 |
Ch. Srinivas | 13 | 42 | 562 |
V. Vasu | 12 | 36 | 567 |
P. Hari Krishna | 11 | 35 | 491 |
K. Narendra | 10 | 46 | 291 |
Anish C. Turlapaty | 9 | 35 | 270 |
N. Ravikumar | 9 | 27 | 425 |
K. Ramanaiah | 9 | 18 | 292 |
Hari Krishna Vydana | 9 | 34 | 218 |
Aniruddh Bahadur Yadav | 9 | 22 | 213 |
K. R. Anne | 9 | 29 | 216 |