Journal ArticleDOI
0.97 mΩcm 2 /820 V 4H-SiC super junction V-groove trench MOSFET
T. Masuda,R. Kosugi,Toru Hiyoshi +2 more
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TLDR
In this article, a Super Junction (SJ) V-groove trench MOSFET was fabricated and demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V.Abstract:
We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that V b lowering appeared according to its width.read more
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Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide
TL;DR: In this paper, the technical characteristics of promising technologies of power transistors based on silicon (Si) and silicon carbide (SiC) have been analyzed and a comparative analysis of the energy characteristics of power diodes, MOSFETs and IGBT transistors of various classes based on these technologies is presented.
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Journal ArticleDOI
690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs
TL;DR: In this article, the double-trench MOSFET was proposed to improve the oxide destruction at the trench bottom during high drain-source voltage application, which has both source trenches and gate trenches.
Journal ArticleDOI
A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
Takeyoshi Masuda,Keiji Wada,Toru Hiyoshi,Yu Saitoh,Hideto Tamaso,Mitsuhiko Sakai,Kenji Hiratsuka,Yasuki Mikamura,Masanori Nishiguchi,Tomoaki Hatayama,Hiroshi Yano +10 more
TL;DR: In this paper, a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and specific on-resistance of 35 mΩcm2.