Journal ArticleDOI
0.97 mΩcm 2 /820 V 4H-SiC super junction V-groove trench MOSFET
T. Masuda,R. Kosugi,Toru Hiyoshi +2 more
Reads0
Chats0
TLDR
In this article, a Super Junction (SJ) V-groove trench MOSFET was fabricated and demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V.Abstract:
We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (R on A) of 0.97 mΩcm2 and a blocking voltage (V b ) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that V b lowering appeared according to its width.read more
Citations
More filters
Proceedings ArticleDOI
Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy
TL;DR: In the longitudinal section of filled stripe trenches, an experimentally observed dip, which had not been well reproduced with a previous technique using a fixed surface free energy $\gamma$, came to be qualitatively reproduced by including an orientation dependence of ''gamma'' as mentioned in this paper.
Journal ArticleDOI
Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs
Takeyoshi Masuda,Yu Saito,Tomoaki Hatayama,Hisato Michikoshi,Yasuki Mikamura,Shinsuke Harada +5 more
TL;DR: In this article, a super junction (SJ) structure was proposed for a 4H-SiC V-groove trench MOSFET with super junction structure and a 0.63 mΩcm2 / 1170 V property was demonstrated.
Journal ArticleDOI
Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001)
TL;DR: In this paper , the effect of stripping of the ion electrons on the E dependence of the electronic stopping cross section (S e) in 4H-SiC superjunction devices was investigated.
Journal ArticleDOI
Extending the Power-Cycling Lifetime of SiC Modules Operating at 225°C
So Tanaka,Jiro Shinkai,Hiroshi Hozoji,Fumiki Kato,Masato Ikegawa,Hiroshi Sato,Hiromi Kurashima +6 more
TL;DR: SiCチップ上面にCu-Invar-Cuからなる緩衝板を銅焼結材により接合し，線膨張qu�率をSiC より小さい範囲に設計することにらり
Journal ArticleDOI
Enhanced nitrogen incorporation in the 〈112̄0〉 directions on the (0001̄) facet of 4H-SiC crystals
TL;DR: In this article , the azimuthal dependence of nitrogen incorporation on the (000 1¯ ) facet during PVT growth of 4H-SiC crystals was investigated using Raman scattering microscopy and atomic force microscopy (AFM).
References
More filters
Journal ArticleDOI
690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs
TL;DR: In this article, the double-trench MOSFET was proposed to improve the oxide destruction at the trench bottom during high drain-source voltage application, which has both source trenches and gate trenches.
Journal ArticleDOI
A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
Takeyoshi Masuda,Keiji Wada,Toru Hiyoshi,Yu Saitoh,Hideto Tamaso,Mitsuhiko Sakai,Kenji Hiratsuka,Yasuki Mikamura,Masanori Nishiguchi,Tomoaki Hatayama,Hiroshi Yano +10 more
TL;DR: In this paper, a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and specific on-resistance of 35 mΩcm2.