Journal ArticleDOI
1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain
Michael A. Newkirk,Barry Miller,Uziel Koren,M.G. Young,M. D. Chien,Robert M. Jopson,Charles A. Burrus +6 more
Reads0
Chats0
TLDR
In this article, a multiquantum-well optical amplifier for 1.5-mu m wavelength operation using alternating tensile and compressively strained wells in the active region is described.Abstract:
A multiquantum-well optical amplifier for 1.5- mu m wavelength operation using alternating tensile and compressively strained wells in the active region is described. For each bias level measured, the polarization sensitivity of the amplifier gain is 1 dB or less averaged over the gain bandwidth. This amplifier is suitable for integration with other optical devices in photonic integrated circuits which require polarization-independent gain. >read more
Citations
More filters
Journal ArticleDOI
III-V compound SC for optoelectronic devices
TL;DR: In this article, the important device applications of various III-V compound semiconductors are reviewed for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells.
Journal ArticleDOI
Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
TL;DR: In this paper, the progress in longwavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed.
Journal ArticleDOI
InP Photonic Integrated Circuits
Radhakrishnan Nagarajan,Masaki Kato,Jacco Pleumeekers,Peter W. Evans,Scott Corzine,Sheila Hurtt,Andrew Dentai,S. Murthy,Mark J. Missey,R. Muthiah,Randal A. Salvatore,C.H. Joyner,Richard P. Schneider,Mehrdad Ziari,Fred A. Kish,David F. Welch +15 more
TL;DR: In this article, the state of the art in advanced InP photonic ICs is reviewed for the 1.3-1.6 m wavelength optical fiber optical fiber. And the authors present a survey of the state-of-the-art in InP ICs.
Patent
Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
David F. Welch,V. Dominic,Fred A. Kish,Mark J. Missey,Radhakrishnan Nagarajan,Atul Mathur,Frank H. Peters,Robert B. Taylor,Matthew L. Mitchell,Alan C. Nilsson,Stephen G. Grubb,Richard P. Schneider,Charles H. Joyner,Jonas Webjorn,Drew D. Perkins +14 more
TL;DR: In this paper, a photonic integrated circuit (PIC) consisting of an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated source, and a wavelength selective combiner having an input optically coupled to receive all the signal outputs from the modulated signals and provide a combined output signal on an output waveguide from the chip.
Journal ArticleDOI
1.55 /spl mu/m polarisation independent semiconductor optical amplifier with 25 dB fiber to fiber gain
Pierre Doussiere,P. Garabedian,C. Graver,D. Bonnevie,T. Fillion,E. Derouin,M. Monnot,J.-G. Provost,D. Leclerc,M. Klenk +9 more
TL;DR: Using a tapered in width square active waveguide and bulk InGaAsP/InP material, the authors demonstrate a polarisation independent amplifier structure operating at 1550 nm with a reduced far-field divergence.
References
More filters
Journal ArticleDOI
Semiconductor photonic integrated circuits
Thomas L. Koch,Uziel Koren +1 more
TL;DR: A discussion is presented of the design and fabrication issues, illustrated by a number of recently demonstrated InP-based PICs.
Journal ArticleDOI
Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers
Masamichi Yamanishi,Ikuo Suemune +1 more
TL;DR: The polarization dependent gain in quantum well lasers reported previously is explained theoretically in terms of the polarization dependence of momentum matrix elements related to conduction to heavy hole and conduction-to-light hole band transitions.
Journal ArticleDOI
Near 100% efficient fibre microlenses
TL;DR: In this paper, a microlenses have been fabricated directly on the ends of optical fibres which demonstrate 90% (-0.45 dB) coupling efficiencies to semiconductor lasers.
Journal ArticleDOI
Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers
TL;DR: In this paper, a strain compensated multiple quantum well (MQW) structure was constructed by introducing opposite strain into the barrier layers, which showed significant improvement in the photoluminescence spectra.
Journal ArticleDOI
1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier
K. Magari,M. Okamoto,Y. Noguchi +2 more
TL;DR: In this paper, a polarization-insensitive optical amplifier was realized at a wavelength of 1.55 mu m. The active layer consisted of a tensile-strained-barrier multiple quantum well (MQW) structure.
Related Papers (5)
1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier
K. Magari,M. Okamoto,Y. Noguchi +2 more
40-Gb/s tandem electroabsorption modulator
B. Mason,Abdallah Ougazzaden,Charles W. Lentz,K.G. Glogovsky,C.L. Reynolds,George John Przybylek,R.E. Leibenguth,T.L. Kercher,J.W. Boardman,M. Rader,J. M. Geary,F.S. Walters,L.J. Peticolas,Joseph Michael Freund,S.N.G. Chu,Andrei Sirenko,R.J. Jurchenko,Mark S. Hybertsen,L.J.P. Ketelsen,Gregory Raybon +19 more