Journal ArticleDOI
10Gbps VCSEL Driver in 0.18μm CMOS Technology
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TLDR
In this paper, a 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology.Abstract:
A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.read more
Citations
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Proceedings Article
The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks
Timothy O. Dickson,K.H.K. Yau,T. Chalvatzis,A. Mangan,E. Laskin,R. Beerkens,P. Westergaard,M. Tazlauanu,Ming-Ta Yang,Sorin P. Voinigescu +9 more
TL;DR: Evidence is provided that, as a result of constant-field scaling, the peak fT, peak fMAX, and optimum noise figure NFMIN current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and constant current-density biasing schemes are proposed to be applied to M OSFET analog/mixed-signal/RF and high-speed digital circuit design.
Journal Article
10Gb/s 0.18μm CMOS Transceiver IC
TL;DR: In this paper, the design of a 10Gb/s transceiver fabricated with 018 µm CMOS technology is introduced, which is included in the multiplexer and laser diode driver, and the simulation results show that the circuit can amplify the input signal amplitude from 2 µm to 14 µm on a 50 µm output resistance at 10 µm.
References
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Proceedings Article
The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks
Timothy O. Dickson,K.H.K. Yau,T. Chalvatzis,A. Mangan,E. Laskin,R. Beerkens,P. Westergaard,M. Tazlauanu,Ming-Ta Yang,Sorin P. Voinigescu +9 more
TL;DR: Evidence is provided that, as a result of constant-field scaling, the peak fT, peak fMAX, and optimum noise figure NFMIN current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and constant current-density biasing schemes are proposed to be applied to M OSFET analog/mixed-signal/RF and high-speed digital circuit design.
Journal ArticleDOI
The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks
Timothy O. Dickson,K.H.K. Yau,T. Chalvatzis,A. Mangan,E. Laskin,R. Beerkens,P. Westergaard,M. Tazlauanu,Ming-Ta Yang,Sorin P. Voinigescu +9 more
TL;DR: In this article, it was shown that the current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and that the characteristic current density also remains invariant for the most common circuit topologies such as MOS-SiGe HBT cascodes, MOS CML gates, and nMOS transimpedance amplifiers (TIAs) with active pMOS FET loads.
Journal ArticleDOI
SiGe BiCMOS technology for RF circuit applications
M. Racanelli,P. Kempf +1 more
TL;DR: Key RF circuit results highlighting the advantages of SiGe BiCMOS in addressing today's RF IC market are discussed both for applications at modest frequencies (1 to 10 GHz) as well as for emerging applications at higher frequencies (20 to >100 GHz).
Journal ArticleDOI
A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic
TL;DR: A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply operates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed, and a true Bi CMOS logic topology is presented that allows for operation from lower supply voltages than pure HBT implementations without compromising speed.
Journal ArticleDOI
10-Gb/s modulator drivers with local feedback networks
Day-Uei Li,Chia-Ming Tsai +1 more
TL;DR: The present work shows that the driving capability of the 10-Gb/s modulator drivers is greater than that of the currently reported silicon-based drivers.