Journal ArticleDOI
42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs
Ryo Hayashi,Ayumu Sato,Masato Ofuji,Katsumi Abe,Hisato Yabuta,Masafumi Sano,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +10 more
- Vol. 39, Iss: 1, pp 621-624
TLDR
In this paper, the authors review the features of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors, as well as circuit operation based on these TFTs.Abstract:
We review the features of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a-IGZO properties, where a conventional PECVD a-SiNX:H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Semiconductor device and display device
Hajime Kimura,Shunpei Yamazaki +1 more
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Journal ArticleDOI
P-9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In-Ga-Zn-Oxide TFT
Hiromichi Godo,Daisuke Kawae,Shuhei Yoshitomi,Toshinari Sasaki,Shunichi Ito,Hiroki Ohara,Akiharu Miyanaga,Shunpei Yamazaki +7 more
TL;DR: In this article, inverted-staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs were fabricated and measured temperature dependence of the TFT characteristics.
Patent
Thin-film transistor
Hongyong Zhang,Shunpei Yamazaki +1 more
TL;DR: In this paper, a gate-insulated thin-film transistor with a halogen block in between the blocking layer and a gate insulator is described. But the block is not used to prevent the transistor from being contaminated with impurities such as alkali ions.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Journal ArticleDOI
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
Journal ArticleDOI
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta,Masafumi Sano,Katsumi Abe,Toshiaki Aiba,Tohru Den,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
Journal ArticleDOI
High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
Min-Kyu Kim,Jong Han Jeong,Hun Jung Lee,Tae Kyung Ahn,Hyun Soo Shin,Jin-Seong Park,Jae Kyeong Jeong,Yeon-Gon Mo,Hye-Dong Kim +8 more
TL;DR: In this article, thin film transistors (TFTs) were fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching.