Proceedings ArticleDOI
90 GHz Single-Drift Impatt Diodes with High Output Power Level
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TLDR
In this article, the authors proposed a double-drift impatt diodes with output power of 250 mW and 500 mW on copper and diamond hot-switches, respectively.Abstract:
The increasing interest in solid state generators for millimeter wave application demands powerful devices. In the 90 GHz region up to now silicon impatt diodes exhibited the best performance. Purchasable cw-impatt diodes for W-band frequencies are normally double-drift diodes with output powers of 250 mW on copper heatsink and 500 mW on diamond heatsink (1,2). Leistner reached comparable values with single-drift diodes but in an open package with quartz stand offs (3).read more
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Journal ArticleDOI
A 90-GHz double-drift IMPATT diode made with Si MBE
TL;DR: In this paper, the double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy and the n-type layers are grown at 750 °C on low-resistivity n+-type substrates followed by p-type layer at 650 °C.
References
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Journal ArticleDOI
Millimeter-Wave CW IMPATT Diodes and Oscillators
T.A. Midford,R.L. Bernick +1 more
TL;DR: In this article, the current state of the art of silicon CW millimeter-wave IMPATT diodes and oscillators in the frequency range from 30 to 250 GHz is summarized.
Journal ArticleDOI
New progress in the development of a 94-GHz pretuned module silicon IMPATT diode
M. Heitzmann,M. Boudot +1 more
TL;DR: In this paper, the authors presented 94 GHz pretuned modules with high efficiency, achieving CW output power levels of 345 mW with gold integrated heat sink and 800mW with diamond heat sink with double-drift IMPATT diodes at frequencies around 94 GHz.
Journal ArticleDOI
Assessment of millimetre-wave Si IMPATT material
L.A. Hing,J.E. Curran +1 more
TL;DR: In this paper, it was shown that the determination of the doping profile from C/V or VB measurements leads to erroneous results and that SRP profiling is the preferred method.