scispace - formally typeset
Journal ArticleDOI

A 300 mK ultra-high vacuum scanning tunneling microscope for spin-resolved spectroscopy at high energy resolution

Reads0
Chats0
TLDR
In this paper, the authors describe the design and development of a scanning tunneling micoscope (STM) working at very low temperatures in ultra-high vacuum (UHV) and at high magnetic fields.
Abstract
We describe the design and development of a scanning tunneling micoscope (STM) working at very low temperatures in ultra-high vacuum (UHV) and at high magnetic fields. The STM is mounted to the 3He pot of an entirely UHV compatible 3He refrigerator inside a tube which can be baked out to achieve UHV conditions even at room temperature. A base temperature of 315 mK with a hold time of 30 h without any recondensing or refilling of cryogenics is achieved. The STM can be moved from the cryostat into a lower UHV-chamber system where STM-tips and -samples can be exchanged without breaking UHV. The chambers contain standard surface science tools for preparation and characterization of tips and samples in particular for spin-resolved scanning tunneling spectroscopy (STS). Test measurements using either superconducting tips or samples show that the system is adequate for performing STS with both high spatial and high energy resolution. The vertical stability of the tunnel junction is shown to be 5 pmpp and the energy resolution is about 100 μeV.

read more

Citations
More filters
Journal ArticleDOI

Scanning tunneling spectroscopy of high-temperature superconductors

TL;DR: The use of tunneling microscopy and spectroscopy has played a central role in the experimental verification of the microscopic theory of superconductivity in classical superconductors as discussed by the authors.
Journal ArticleDOI

Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

TL;DR: A detailed analysis shows that the long-range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrates.
Journal ArticleDOI

Realizing all-spin-based logic operations atom by atom.

TL;DR: This work combined bottom-up atomic fabrication with spin-resolved scanning tunneling microscopy to construct and read out atomic-scale model systems performing logic operations, using substrate-mediated indirect exchange coupling to achieve logical interconnection between individual atomic spins.
Journal ArticleDOI

Revealing magnetic interactions from single-atom magnetization curves.

TL;DR: The ability to measure magnetization curves of individual magnetic atoms adsorbed on a nonmagnetic metallic substrate with use of a scanning tunneling microscope with a spin-polarized tip and map out low-energy magnetic interactions on the atomic scale is demonstrated.
Journal ArticleDOI

Atom-by-atom engineering and magnetometry of tailored nanomagnets

TL;DR: In this paper, small clusters of magnetic atoms can behave in very different ways to those same atoms in bulk, and they can be arranged one by one into complex but well-defined patterns on a copper surface.
References
More filters
Journal ArticleDOI

Two-Dimensional Magnetotransport in the Extreme Quantum Limit

TL;DR: The formation of a Wigner solid or charge-density-wave state with triangular symmetry is suggested as a possible explanation for the formation of the Hall plateau in magnetotransport of high-mobility, two-dimensional electrons as mentioned in this paper.
Journal ArticleDOI

Theory of the scanning tunneling microscope

TL;DR: In this paper, a metal tip is scanned along the surface while ad justing its height to maintain constant vacuum tunneling current, and a contour map of the surface is generated.
Journal ArticleDOI

Theory and Application for the Scanning Tunneling Microscope

TL;DR: In this article, a theory for vacuum tunneling between a real solid surface and a model probe with a locally spherical tip is presented, applicable to the recently developed "scanning tunneling microscope."
Journal ArticleDOI

Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure

TL;DR: In this article, the spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${a}}{0.48}$As quantum well can be controlled by applying a gate voltage.
Related Papers (5)