Proceedings ArticleDOI
A fully-decoded 2048-bit electrically-programmable MOS ROM
D. Frohman-Bentchkowsky
- pp 80-81
TLDR
A novel MOS charge storage transistor developed for an electrically-programmable ROM will be described, which provides access times of 500 ns (dynamic mode) or 800 ns (static mode).Abstract:
A novel MOS charge storage transistor developed for an electrically-programmable ROM will be described. The memory element is a fully-decoded 2048-bit silicon gate MOS chip that provides access times of 500 ns (dynamic mode) or 800 ns (static mode).read more
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References
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AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2
TL;DR: In this paper, electron injection from p type silicon and hole injection from n type silicon by hot carrier emission have been observed to achieve average electron current densities as high as 10−2 A/cm2.
Journal ArticleDOI
Silicon-gate technology
TL;DR: Recent progress with silicon-gate technology is reviewed and its application to the construction of complex digital functions as illustrated by a memory circuit is shown.
Journal ArticleDOI
An integrated metal-nitride-oxide-silicon (MNOS) memory
TL;DR: A nonvolatile integrated metal-nitride-oxide-silicon (MNOS) word organized memory was fabricated in this paper, and the salient features of this integrated storage array are 1) WRITE cycle 2.0 microseconds, READ cycle 500 nanoseconds, 2) WRITE voltage ± 25V, 3) single device per storage bit, 4) MOS driving circuitry with no isolation between MOS and MNOS devices on the same chip, and 5) nonvolatility storage of information.
Journal ArticleDOI
A new MNOS charge storage effect
H.G. Dill,T.N. Toombs +1 more
TL;DR: In this article, the authors describe a new charge storage effect occurring in MNOS tetrodes, which uses direct carrier injection over the Schottky barrier between silicon and gate insulator rather than tunnelling.
Journal ArticleDOI
A read-only memory using MAS transistors
TL;DR: A nonvolatile read-only memory using MAS (metal-alumina-silicon) transistors, that is electrically writable, is expected to hold written data for 1019hrs.