Journal ArticleDOI
A growth mechanism for graphene deposited on polycrystalline Co film by plasma enhanced chemical vapor deposition
Shumin Wang,Liang Qiao,Cuimei Zhao,Xiaoming Zhang,Jianli Chen,Hongwei Tian,Weitao Zheng,Zhengbo Han +7 more
TLDR
In this article, the effect of deposition time on the crystallinity of graphene, such as graphitic degree and in-plane crystallite size, was explored, and it was shown that a direct growth mechanism plays an important role in the formation of graphene.Abstract:
Graphene is deposited on polycrystalline Co film by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD), and the effect of deposition time on the crystallinity of graphene, such as graphitic degree and in-plane crystallite size, is explored. The findings are that graphene can be obtained on polycrystalline Co film for only 15 s, suggesting that a direct growth mechanism plays an important role in the formation of graphene. The first-principles density functional theory (DFT) results also reveal that the graphene is more easily formed on Co via a surface direct growth mechanism than that via a precipitation mechanism. Our studies are critical in guiding the graphene growth process as we try to achieve the highest quality graphene for electronic devices.read more
Citations
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Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene
H. Cheun Lee,Wei-Wen Liu,Siang-Piao Chai,Abdul Rahman Mohamed,Azizan Aziz,Cheng Seong Khe,N. M. S. Hidayah,Uda Hashim +7 more
TL;DR: In this article, the state-of-the-art research activities and latest advancement in the synthesis of graphene using various carbon precursors including solid, liquid and gas carbon feedstocks are reviewed.
Journal ArticleDOI
Origins of sp(3)C peaks in C1s X-ray Photoelectron Spectra of Carbon Materials.
TL;DR: This work clarified that one of the reasons for the prevailing ambiguous assignments of sp(3)C peaks is charging effects of diamond.
Journal ArticleDOI
Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications
TL;DR: Recent advances in the PECVD growth of graphene on different substrates are summarized, the growth mechanism and its related applications are discussed, and the challenges and future development in this field are discussed.
Journal ArticleDOI
Surface plasmon resonance technique for directly probing the interaction of DNA and graphene oxide and ultra-sensitive biosensing
Tianyu Xue,Xiaoqiang Cui,Weiming Guan,Qiyu Wang,Chang Liu,Haitao Wang,Kun Qi,David J. Singh,Weitao Zheng +8 more
TL;DR: Development of a novel biosensor for highly sensitive and selective detection of ssDNA based on indirect competitive inhibition assay (ICIA) with a linear dynamic range of 10(-14)-10(-6)M, a detection limit of 10fM and a high level of stability during repeated regeneration is reported.
References
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Generalized Gradient Approximation Made Simple
TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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Special points for brillouin-zone integrations
Hendrik J. Monkhorst,J.D. Pack +1 more
TL;DR: In this article, a method for generating sets of special points in the Brillouin zone which provides an efficient means of integrating periodic functions of the wave vector is given, where the integration can be over the entire zone or over specified portions thereof.
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Soft self-consistent pseudopotentials in a generalized eigenvalue formalism.
TL;DR: Novel features are that the pseudopotential itself becomes charge-state dependent, the usual norm-conservation constraint does not apply, and a generalized eigenproblem is introduced.