Journal ArticleDOI
A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
M. Shatzkes,James R. Lloyd +1 more
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TLDR
In this paper, a model was constructed for electromigration failure where both Fickian diffusion and mass transport due to the electromigration driving force are considered concurrently and the solution to the resulting diffusion equation yields a current exponent of 2 and an activation energy consistent with grain-boundary self-diffusion.Abstract:
A model was constructed for electromigration failure where both Fickian diffusion and mass transport due to the electromigration driving force are considered concurrently. The solution to the resulting diffusion equation yields a current exponent of 2 and an activation energy consistent with grain‐boundary self‐diffusion. A modification of the standard median time to failure equation first proposed by Black is suggested.read more
Citations
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Recent advances on electromigration in very-large-scale-integration of interconnects
TL;DR: In this paper, the authors reviewed what is current with respect to electromigration in Cu in terms of resistance, capacitance delay, electromigration resistance, and cost of production, and concluded that the most serious and persistent reliability problem in interconnect metallization is electromigration.
Journal ArticleDOI
Stress evolution due to electromigration in confined metal lines
TL;DR: In this paper, solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
Journal ArticleDOI
One hundred fold increase in current carrying capacity in a carbon nanotube–copper composite
Chandramouli Subramaniam,Takeo Yamada,Kazufumi Kobashi,Atsuko Sekiguchi,Don N. Futaba,Motoo Yumura,Kenji Hata +6 more
TL;DR: Carbon nanotube–copper composite is reported, the only material with both high conductivity and high ampacity, making it uniquely suited for applications in microscale electronics and inverters.
Journal ArticleDOI
Electromigration: A review
D.G. Pierce,P.G. Brusius +1 more
TL;DR: In this article, the authors examined the fundamental physics of electromigration and provided a basis for understanding the factors that affect the lifetimes under the various test conditions, and the care necessary to make fast, wafer-level tests an important process control tool is discussed.
Journal ArticleDOI
Stress and electromigration in Al-lines of integrated circuits
TL;DR: In this article, the generation of tensile and compressive stress by the annihilation and production of vacancies which are subject to driving forces due to electromigration and due to the developing stress gradient is calculated.
References
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Journal ArticleDOI
Handbook of Mathematical Functions
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Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
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Electromigration Damage in Aluminum Film Conductors
M. J. Attardo,R. Rosenberg +1 more
TL;DR: In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.
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Void Formation and Growth During Electromigration in Thin Films
R. Rosenberg,M. Ohring +1 more
TL;DR: In this paper, the authors investigated the effect of irregularities in the grain-boundary structure of films and determined the magnitude and distribution of excess vacancy concentrations at sites where electromigration flux divergencies may be present.
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Electromigration and metalization lifetimes
TL;DR: In this article, a model has been developed to predict the lifetime τf of integrated circuit metalizations which operate at high dc densities Je, where grain boundary electromigration, internal heat generation, and current crowding at growing voids dominate the rate processes that lead to failure.