Journal ArticleDOI
α-SiC–β-SiC heteropolytype structures on Si (111)
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TLDR
In this article, the intentional formation of the α-β structure was achieved by adjusting the SiH4 to C2H4 flux ratios to carbon rich conditions and by controlling the diffusion length.Abstract:
Nanoscale α-SiC(0001) on β-SiC(111) heterostructures on Si (111) substrates fabricated by ultralow-pressure chemical vapor deposition are demonstrated. The intentional formation of the α-β structure was achieved by adjusting the SiH4 to C2H4 flux ratios to carbon rich conditions and by controlling the diffusion length. The developed method allows the formation of heteropolytypic structures with a controlled thickness of the intermediate cubic β-SiC layer.read more
Citations
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Journal ArticleDOI
Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films
S. A. Kukushkin,A. V. Osipov +1 more
TL;DR: In this paper, the authors proposed a solid-phase epitaxy method for SiC growth on Si. The new method is based on the substitution of some atoms in the silicon matrix by the carbon atoms to form the molecules of silicon carbide.
Journal ArticleDOI
Inner potential fluctuation in SiC nanowires with modulated interior structure
TL;DR: In this paper, the difference in the values of mean inner potential between the perfect crystal and the defective regions by means of electron holography was found by using electron resonance analysis.
Journal ArticleDOI
Demonstration of hexagonal phase silicon carbide nanowire arrays with vertical alignment
TL;DR: In this article, the growth of hexagonal phase SiC nanowire arrays with vertical alignment on commercially available single crystalline SiC substrates was reported, showing a polytypic distribution of predominantly 2H and 4H.
Journal ArticleDOI
Local control of SiC polytypes
TL;DR: In this article, a combination of ion implantation and annealing combined with epitaxial growth by sublimation technique was used for the formation of laterally and vertically stacked desired polytype inclusions.
Journal ArticleDOI
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Francisco M. Morales,Daniel R. Carvalho,Teresa Ben,Rafael García,Sergio I. Molina,Antonio Martí,Antonio Luque,C.R. Staddon,R. P. Campion,C. T. Foxon +9 more
TL;DR: Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N as mentioned in this paper. But this is only for single-phase quaternary InxGa1−xAsyN1−y films.
References
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Journal ArticleDOI
Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption
TL;DR: In this paper, the phonon energies of the phonons participating in these transitions are 46, 79, 94, and 103 meV, and suggest that the conduction-band minima are at $X$, as predicted by recent calculations.
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Materials science: Silicon carbide in contention
TL;DR: The problem of producing large, pure wafers of the carbide could be solved, and silicon carbide, the most desirable material for high-power electronic devices, could be produced.
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Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
TL;DR: In this paper, an overview is given of the results and conclusions of recent material research on the MBE growth, characterization and properties of SiC heteropolytypic structures and related materials.
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Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces
TL;DR: Growth of SiC on off-oriented 6H•SiC{0001} substrates was quantitatively analyzed based on the theory proposed by Burton, Cabrera, and Frank (BCF theory).
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Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure
TL;DR: In this article, Adamsky and Merz used group-theoretical selection rules to determine the active phonons, as Lax and Hopfield did for Ge and Si. The observed spectrum is consistent with the selection rules, provided there are conduction-band minima at the $K$ positions of the Brillouin zone (two minima).