Journal ArticleDOI
α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature
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TLDR
In this paper, the effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p++ p n n++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments.Abstract:
The effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p++ p n n++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments. This study reveals that at 300 K < T < 600 K, a 4H-SiC IMPATT diode may yield 3.5 W of output power (efficiency (η) ~ 8.6%) at 1.3 THz, while its 6H-SiC counterpart can deliver 3 W of output power (η = 6.3%) at 1.2 THz. It is interesting to observe that at elevated temperature, the performance of a 6H-SiC IMPATT diode degrades more in comparison with its 4H-SiC counterpart. These comparative analyses reveal the superiority of 4H-SiC diodes over their 6H-SiC counterparts, and thus establish the potential of the former as a high-power THz IMPATT oscillator even in harsh environments. Mobile space charge effects and the effect of positive series resistance on the high-temperature performance of the THz devices are also simulated, and it is found that series resistance reduces the output power level of the diodes by at least 15.0%. Moreover, the effects of increased junction temperature on the photo-sensitivity of top mounted (TM) and flip chip (FC) α-SiC IMPATTs are also investigated using a modified simulation technique. The device operating frequencies, under TM illumination configuration, shifts upward by at least 40.0 GHz, whereas the operating frequency shifts upward by at least 100.0 GHz under FC illumination configuration. The simulation results and the proposed experimental methodology presented here may be used for realizing optically controlled α-SiC transit-time devices for application in THz communication.read more
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References
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Journal ArticleDOI
Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes
Ho-Young Cha,Peter Micah Sandvik +1 more
TL;DR: In this article, optimal physical models and material parameters for 4H-SiC avalanche photodiodes (APDs) were studied using a two-dimensional device simulation tool, taking account of temperature-dependent impact ionization and absorption coefficient as a function of wavelength.
Journal ArticleDOI
Experimental demonstration of a silicon carbide IMPATT oscillator
TL;DR: In this article, the first experimental demonstration of microwave oscillation in 4H-SiC impactionization-avalanche-transit-time (IMPATT) diodes is reported.
Journal ArticleDOI
Photosensitivity Analysis of Gallium Nitride and Silicon Carbide Terahertz IMPATT Oscillators: Comparison of Theoretical Reliability and Study on Experimental Feasibility
TL;DR: In this article, the performance of the terahertz-frequency (1.0 THz) characteristics of widebandgap (WBG) wurtzite (Wz)-GaN-and 4H-SiC-based p++nn++-type single-drift-region (SDR) impact avalanche transit time (IMPATT) devices (normal and photoilluminated) is compared through a simulation scheme.
Journal ArticleDOI
Measurement of series resistance in IMPATT diodes
TL;DR: In this paper, the electrical series resistance of an IMPATT diode was measured based on the oscillation threshold bias current of the diode in a standard circuit and applied to GaAs diodes near 40 GHz.
Journal ArticleDOI
Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes
TL;DR: In this article, low-series resistivity diodes of low series resistivity (<1/spl times/10/sup -4/ /spl Omega//spl middot/cm/sup 2/) were fabricated and packaged.