Journal ArticleDOI
A simple theoretical analysis of the carrier contribution to the elastic constants in quantum wires of IV-VI semiconductors in the presence of a parallel magnetic field
B. R. Nag,Kamakhya P. Ghatak +1 more
TLDR
In this paper, the carrier contribution to the elastic constants in quantum wires of IV-VI semiconductors under parallel magnetic field on the basis of a newly derived electron dispersion law was studied.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1997-03-01. It has received 21 citations till now. The article focuses on the topics: Quantum wire & Magnetic field.read more
Citations
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Journal ArticleDOI
A simple theoretical analysis of the effective electron mass in III-V, ternary and quaternary materials in the presence of light waves
TL;DR: In this article, a simple theoretical analysis of the effective electron mass (EEM) at the Fermi level for III-V, ternary and quaternary materials, on the basis of a newly formulated electron energy spectra in the presence of light waves whose unperturbed energy band structures are defined by the three-band model of Kane, is presented.
Journal ArticleDOI
Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field
TL;DR: In this paper, the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III-V, II-VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures was analyzed.
Journal ArticleDOI
On the density-of-states function in heavily doped compound semiconductors
TL;DR: In this article, the energy spectrum of conduction electrons and the corresponding density-of-states (DOS) in heavily doped compound semiconductors forming band-tails were studied.
Journal ArticleDOI
On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison
TL;DR: In this article, an attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism.
Journal ArticleDOI
The carrier contribution to the elastic constants in small-gap materials
TL;DR: In this article, a simple theoretical analysis of the carrier contribution to the second and third order elastic constants in nonparabolic materials on the basis of an electron dispersion law by taking into account various anisotropies of the energy band structure was presented.
References
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Book
Electron transport in compound semiconductors
TL;DR: In this paper, the Boltzmann Transport Equation is used to calculate the collision probability of the Sphalerite and the Chalcopyrite structures, and the Brillouin Zone is used for the Wurtzite structure.
BookDOI
Science and engineering of one- and zero-dimensional semiconductors
TL;DR: The proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1 and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of theNATO International Scientific Exchange Program as discussed by the authors.
Journal ArticleDOI
On the effective electron mass in strained layer superlattices of non-parabolic semiconductors under strong magnetic quantization
Kamakhya P. Ghatak,B. Mitra +1 more
TL;DR: In this paper, an attempt is made to study the effective electron mass in strained layer superlattices of non-parabolic semiconductors with graded structures under sirong magnetic quantization and to compare the same with the bulk specimens of the constituent materials, by formulating the appropriate magneto-dispersion laws.
Journal ArticleDOI
On the photoemission from quantum-confined Kane-type semiconductors
Kamakhya P. Ghatak,M. Mondal +1 more
TL;DR: In this paper, the photoemission from ultrathin films, quantum wires and quantum dots of degenerate Kane-type semiconductors, respectively, on the basis of a newly derived dispersion relation of the conduction electrons allowing all types of anisotropies of the band parameters within the framework of k⋅p formalism was investigated.
Related Papers (5)
On the carrier contribution to the elastic constants in ultrathin films of bismuth under quantizing magnetic field
Kamakhya Prasad Ghatak,B. R. Nag +1 more
On the Einstein relation in narrow-gap semiconductors in the presence of a quantizing magnetic field
B. Mitra,Kamakhya P. Ghatak +1 more