Journal ArticleDOI
A simple theoretical analysis of the thermo-electric power in quantum dots of nonparabolic semiconductors in the presence of a parallel magnetic field
Kamakhya P. Ghatak,B. R. Nag +1 more
TLDR
In this article, an attempt is made to study the thermoelectric power in quantum dots of non-parabolic semiconductors in the presence of a parallel magnetic field on the basis of a new electron dispersion law.About:
This article is published in Nanostructured Materials.The article was published on 1995-09-01. It has received 10 citations till now. The article focuses on the topics: Quantum dot & Seebeck coefficient.read more
Citations
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Journal ArticleDOI
On the two-dimensional thermoelectric power in quantum wells of non-parabolic materials under magnetic quantization
TL;DR: In this article, a simplified theoretical formulation of the thermoelectric power (TP) under magnetic quantization in quantum wells (QWs) of nonlinear optical materials on the basis of a newly formulated magneto-dispersion law is presented.
Book ChapterDOI
Applications and Brief Review of Experimental Results
TL;DR: In this article, the authors have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wavevector space of the charge carriers, respectively.
Book ChapterDOI
Few Related Applications and Brief Review of Experimental Results
TL;DR: The concept of band gap measurement in the presence of intense external light waves is discussed and additional five related applications in this context are presented.
Book ChapterDOI
Thermoelectric Power in Quantum Dots Under Large Magnetic Field
TL;DR: The classical TPSM equation is valid only under the condition of carrier nondegeneracy, is being independent of carrier concentration, and reflects the fact that the signature of the band structure of any material is totally absent in the same as mentioned in this paper.
Book ChapterDOI
The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field
TL;DR: In this article, the DR in nano-wires of HD III-V semiconductors in the presence of cross fields has been investigated in Sect. 1.2.1.
References
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Journal ArticleDOI
Epitaxial Hg1−xCdxTe growth by low‐temperature metalorganic chemical vapor deposition
Abstract: We report the first low‐temperature metalorganic chemical vapor deposition of Hg1−xCdxTe using a thermal precracking technique. The precracking technique enables one to grow epitaxial Hg1−xCdxTe on CdTe substrates at temperatures as low as 225 °C. The growth rate is 1–2 μm/h. The film is epitaxial and has good morphology. The Hg1−xCdxTe epilayer also shows infrared transmission with a sharp cut‐off edge. The Hg0.7Cd0.3Te material is n type and has a room‐temperature mobility of 12 200 cm2/V s with carrier concentration of 2.7×1017 cm−3 and 77 K mobility of 27 000 cm2/V s with carrier concentration of 1.0×1017 cm−3. This low‐temperature precracking technique offers the feasibility of fabricating structures with sharp heterojunctions for Hg1−xCdxTe compounds by metalorganic chemical vapor deposition.
Journal ArticleDOI
High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm
TL;DR: In this article, the authors reported In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50-70% without antireflection coating.
Journal ArticleDOI
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
TL;DR: In this paper, the first electroreflectance study of In1−xGaxAsyP1−y lattice-matched to InP in the energy range 0.75 −5.5 eV was presented.
Journal ArticleDOI
On the photoemission from quantum-confined Kane-type semiconductors
Kamakhya P. Ghatak,M. Mondal +1 more
TL;DR: In this paper, the photoemission from ultrathin films, quantum wires and quantum dots of degenerate Kane-type semiconductors, respectively, on the basis of a newly derived dispersion relation of the conduction electrons allowing all types of anisotropies of the band parameters within the framework of k⋅p formalism was investigated.
Journal ArticleDOI
The Einstein relation in ultrathin films of non-parabolic semiconductors under magnetic quantization
Kamakhya P. Ghatak,S.N. Biswas +1 more
TL;DR: In this paper, the authors studied the Einstein relation in ultrathin films of non-parabolic semiconductors under strong magnetic quantization on the basis of a new dispersion law within the framework of k. p formalism, incorporating the anisotropies of the energy band constants.
Related Papers (5)
On the thermoelectric power in n-channel inversion layers of ternary chalcopyrite semiconductors under magnetic quantization
Kamakhya P. Ghatak,S. N. Biswas +1 more