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Journal ArticleDOI

A simplified analysis of the field emission from semiconductor superlattices under magnetic quantization

B. Mitra, +1 more
- 18 Dec 1989 - 
- Vol. 142, pp 401-404
TLDR
In this paper, an attempt was made to study the field emitted current density from semiconductor superlattices under strong magnetic quantuzation in the presence of spin and broadening respectively.
About
This article is published in Physics Letters A.The article was published on 1989-12-18. It has received 21 citations till now. The article focuses on the topics: Magnetic field & Field electron emission.

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Citations
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Journal ArticleDOI

On the field emission from HgTe/CdTe supperlattices with graded structures in the presence of a quantizing magnetic field

TL;DR: In this article, the magneto-field emission from HgTe/CdTe superlattices with graded structures was studied and compared with the same emission from the corresponding bulk materials by formulating the respective expressions.
Journal ArticleDOI

Effect of magnetic quantization on the field emission from bismuth

TL;DR: In this article, an attempt was made to study the magneto-field emission from Bi by using the Abrikosov dispersion relation in the presence of spin and broadening.
Journal ArticleDOI

Simple theoretical analysis of the density-of-states function of Kane type semiconductors in the presence of an external electric field

TL;DR: In this article, the authors studied the energy spectrum of conduction electrons and the corresponding density-of- states function of III-V, ternary and quaternary semiconductors, whose unperturbed energy band structures are defined by the three band model of Kane, in the presence of an external electric field.
Journal ArticleDOI

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

TL;DR: In this article, a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of kp formalism was presented.
Journal ArticleDOI

The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

TL;DR: In this article, the authors studied the Einstein relation in superlattices of wideband gap semiconductors under crossfield configuration and the for-ning materials incorporating spin and broadening of Landau levels.
References
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Book

Quantum Mechanics

Journal ArticleDOI

Superlattice and negative differential conductivity in semiconductors

TL;DR: The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the fieId of semiconductors.
Journal ArticleDOI

Electric field dependence of optical absorption near the band gap of quantum-well structures.

TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Book

Semiconductor Statistics

Journal ArticleDOI

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

TL;DR: In this article, a carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs•GaAlAs system, which is attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.
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