Journal ArticleDOI
A small-signal analytical theory for GaAs field-effect transistors at large drain voltages
Jun'ichi Sone,Yoichiro Takayama +1 more
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TLDR
In this article, the small-signal microwave performance of GaAs field effect transistors (FETs) at large drain voltages is investigated, using a new analytical model which takes into account the carrier drift-velocity reduction and saturation due to electron upper valley scattering, and the extension of the depletion layer towards a drain side.Abstract:
Small-signal microwave performance of GaAs field-effect transistors (FET's) at large drain voltages is investigated, using a new analytical model which takes into account the carrier drift-velocity reduction and saturation due to electron upper valley scattering, and the extension of the depletion layer towards a drain side. Both of these play important roles in FET operation at large drain voltages. Small-signal y-parameters are calculated and the transit time effect which occurs in high-frequency operations is shown explicitly. Equivalent FET circuit elements are derived from the obtained y-parameters. Their dependence on device physical parameters, as well as on dc bias conditions, is calculated. The theoretical results are compared with the measured small-signal characteristics of a practical power GaAs FET and a reasonable agreement between them is obtained.read more
Citations
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Journal ArticleDOI
Monte Carlo particle modelling of small semiconductor devices
TL;DR: In this article, a self consistent Monte Carlo particle model for simulation of semiconductor devices is presented, which is capable of correctly reproducing laboratory measurements and can be used as a design tool to evaluate novel ideas.
Journal ArticleDOI
Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters
TL;DR: In this paper, 1-µm gate (Al, Ga)As/GaAs modulation-doped field effect transistors (MODFETs) were compared to those of GaAs MESFET's with an identical geometry.
Journal ArticleDOI
Ultra-Broad-Band GaAs Monolithic Amplifier
TL;DR: In this paper, a two-stage GaAs monolithic amplifier has been developed using two source-grounded FET's to reduce input VSWR without serious noise-figure degradation, an inter-gate-drain negative feedback circuit was adopted.
Journal ArticleDOI
A new analytical model for the GaAs MESFET in the saturation region
TL;DR: In this article, a model that provides the static characteristics and the elements of the equivalent electrical scheme is presented based on an approximate quadratic form for the depleted region under the gate when the electron velocity reaches the saturation velocity.
Book ChapterDOI
Chapter 2 Factors Affecting the Performance of (Al,Ga)As/GaAs and (Al,Ga)As/InGaAs Modulation-Doped Field-Effect Transistors: Microwave and Digital Applications
Hadis Morkoç,Hilmi Ünlü +1 more
TL;DR: In this paper, the authors discuss the factors affecting the performance of (Al,Ga)As/GaAs and modulation-doped field effect transistors (MODFETs), which is the base for microwave and digital applications.
References
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Journal ArticleDOI
A Unipolar "Field-Effect" Transistor
TL;DR: In this article, the authors proposed a new form of transistor called unipolar field effect transistor, which is of the "field effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field.
Journal ArticleDOI
Microwave Field-Effect Transistors--1976
TL;DR: The principle of operation is outlined for Si- and GaAs-MESFET's; the basic device physics, equivalent circuit, high-frequency limitations, and noise behavior are treated.
Journal ArticleDOI
General theory for pinched operation of the junction-gate FET
A.B. Grebene,Sorab K. Ghandhi +1 more
TL;DR: In this article, a device oriented model is developed to describe the operation of the junction-gate field effect transistor (FET) beyond pinch-off, and the model is derived on the basis of a generalized structure with an arbitrary channel doping profile.
Journal ArticleDOI
Microwave properties of Schottky-barrier field-effect transistors
TL;DR: In this paper, the microwave properties of the Schottky-barrier field effect transistor (MESFET) with a gate-length of one micrometer are investigated.
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