Proceedings ArticleDOI
Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance
Toru Tojo,Toru Tojo,Toru Tojo,Ryoich Hirano,Ryoich Hirano,Hideo Tsuchiya,Junji Oaki,Takeshi Nishizaka,Yasushi Sanada,Kazuto Matsuki,Ikunao Isomura,Riki Ogawa,Noboru Kobayashi,Kazuhiro Nakashima,Shinji Sugihara,Hiromu Inoue,Shinichi Imai,Hitoshi Suzuki,Akihiko Sekine,Makoto Taya,Akemi Miwa,Nobuyuki Yoshioka,Katsumi Ohira,Dong-Hoon Chung,Masao Otaki +24 more
- Vol. 5567, pp 1011-1023
TLDR
In this paper, a high-resolution mask inspection platform using DUV wavelength has been developed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography.Abstract:
A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed.read more
Citations
More filters
Proceedings ArticleDOI
Study of EUV mask inspection technique using DUV light source for hp22nm and beyond
Ryoichi Hirano,Nobutaka Kikuiri,Hideaki Hashimoto,Kenichi Takahara,Masatoshi Hirono,Hiroyuki Shigemura +5 more
TL;DR: Wang et al. as discussed by the authors developed a mask inspection system using 199nm wavelength with simultaneous transmitted and reflected illumination optics, which utilize p-polarized and spolarised illumination for high defect detection and sensitivity.
Proceedings ArticleDOI
A novel defect detection optical system using 199-nm light source for EUVL mask
Ryoichi Hirano,Nobutaka Kikuiri,Masatoshi Hirono,Riki Ogawa,Hiroyuki Sigemura,Kenichi Takahara,Hideaki Hashimoto +6 more
TL;DR: In this paper, the authors proposed a mask inspection system using 199nm wavelength with simultaneous transmitted illumination and reflected illumination optics, and is an effectual candidate for hp 32nm node mask inspection.
Proceedings ArticleDOI
Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond
Nobutaka Kikuiri,Shingo Murakami,Hideo Tsuchiya,Motonari Tateno,Kenichi Takahara,Shinichi Imai,Ryoichi Hirano,Ikunao Isomura,Yoshitake Tsuji,Yukio Tamura,Kenichi Matsumura,Kinya Usuda,Masao Otaki,Osamu Suga,Katsumi Ohira +14 more
TL;DR: In this paper, a mask inspection system, whose inspection light wavelength is 199nm, has been developed, with transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2 hours per mask.
Proceedings ArticleDOI
Development of next-generation mask inspection method by using the feature of mask image captured with 199-nm inspection optics
Yoshitake Tsuji,Nobutaka Kikuiri,Shingo Murakami,Kenichi Takahara,Ikunao Isomura,Yukio Tamura,Kyoji Yamashita,Ryoichi Hirano,Motonari Tateno,Kenichi Matsumura,Naohisa Takayama,Kinya Usuda +11 more
TL;DR: Wang et al. as mentioned in this paper developed a mask inspection system using 199nm inspection light wavelength, which can perform transmission and reflection inspection processes concurrently within two hours per plate, and it has the possibility corresponding to next generation mask inspection.
Proceedings ArticleDOI
Novel EUV mask inspection tool with 199-nm laser source and high-resolution optics
Nobutaka Kikuiri,Masatoshi Hirono,Ryoichi Hirano,Tsuyoshi Amano,Osamu Suga,Hiroyuki Shigemura,Hideaki Hashimoto,Kenichi Takahara,Kinya Usuda +8 more
TL;DR: In this paper, a novel EUV mask inspection tool with 199nm laser source and super-resolution technique has been developed, based on NPI-5000PLUS, which is a photo-mask inspection tool for hp2X nm node and beyond.
References
More filters
Proceedings ArticleDOI
CW 198.5-nm light generation in CLBO
TL;DR: In this paper, two fundamental lights are frequency-stabilized and mixed in an external cavity, and the output power of 50mW was demonstrated with a single-resonance cavity.
Proceedings ArticleDOI
Characteristics of an autofocus system on a grating with period smaller than the focus-beam wavelength
Riki Ogawa,Shinji Sugihara,Yoshinori Honguh,Hiroyuki Nagahama,Toshiyuki Watanabe,Hideo Tsuchiya +5 more
TL;DR: In this paper, a through-the-lens autofocus system on a grating with period smaller than the focus beam wavelength is investigated, which has a visible light source of 670nm wavelength and light radiation mechanism for causing light to be obliquely incident on a sample surface.
Proceedings ArticleDOI
Required performances of reticle inspection system for ArF lithography through analysis of defect printability study
Byung Gook Kim,Keishi Tanaka,Nobuyuki Yoshioka,Naohisa Takayama,Keiichi Hatta,Shingo Murakami,Masao Otaki +6 more
TL;DR: In this paper, the defect printability was investigated under various circumstances such as pitch variation and transmission of halftone film, and the authors suggested detail level of inspection sensitivity that new reticle inspection system should be ready.
Proceedings ArticleDOI
Reticle inspection system using DUV wavelength and new alogorithm platform for advanced reticle inspection for 0.13-μm technology node
TL;DR: The United Inspection Computer (UIC), a high-speed scalable computational engine, renders database data to create an image of the mask for die-to- database inspections, which provides high detection sensitivity at high speed for D:D and D:DB inspections.
Journal ArticleDOI
Mask Defect Inspection Method by Database Comparison with 0.25–0.35 µ m Sensitivity
Toru Tojo,Mitsuo Tabata,Kyoji Yamashita,Hideo Tsuchiya,Toshiyuki Watanabe,Chikara Itoh,Akira Ono,Hiromu Inoue,Kentaro Okuda,Hisakazu Yoshino +9 more
TL;DR: An automated mask inspection system based on die-to-database comparison, and a defect inspection method with 0.15 µ m sensitivity for edge and pindot defects is described, including the difficulties of defect detection in an attenuated phase-shift mask.