Journal ArticleDOI
Al/Poly Si specific contact resistivity
TLDR
In this article, the specific contact resistivities of Al/polysilicon interfaces were determined using an extrapolation method, and measurements were taken both before and after an anneal cycle of 20 min at 450°C in forming gas.Abstract:
Experimental results on the specific contact resistivity of Al/polysilicon are given for Al/1.5-percent Si contacting poly Si implanted with boron or phosphorus, annealed to surface concentrations from 3E18 to 4E20 cm-3. Specific contact resistivities of the interfaces involved were determined using an extrapolation method. Measurements were taken at room temperature, and were conducted both before and after an anneal cycle of 20 min at 450°C in forming gas. Results provide a useful parameter which enables modeling of Al/poly Si contacts.read more
Citations
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Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process
TL;DR: In this paper, a stacked double-layer (SDL) thermopile-based infrared sensor with 96 thermocouples on a suspended membrane was designed and fabricated with a CMOS-compatible process.
Patent
Field effect transistor structure for driving inductive loads
TL;DR: The field effect transistor of the present invention includes a body diffusion region having a source diffusion region therein this article, and the metal source contact forms a Schottky type contact with the body diffusion regions.
Proceedings ArticleDOI
Effect of device and interconnect scaling on the performance and noise of packaged CMOS devices
R. Senthinathan,J.L. Prince +1 more
TL;DR: A detailed investigation of the effects of device and interconnect scaling on CMOS performance and noise was performed for multilayer packages in this paper, where experimental scaled device data for one micron and two micron L/sub eff/, and recently developed modeling tools for interconnect parasitics, were obtained.
Journal ArticleDOI
Polysilicon Thin Film Developed on Flexible Polyimide for Biomedical Applications
TL;DR: In this article, a polysilicon thin film was developed on a flexible polyimide substrate using aluminum induced crystallization process for biomedical pressure and temperature sensing applications, and the formation of polycrystalline structure was verified from the developed poly-silicon film.
Dissertation
Aluminum-Silicon Contact Formation Through Narrow Dielectric Openings : Application To Industrial High Efficiency Rear Passivated Solar Cells
TL;DR: In this article, the fundamental experimental procedure for creating an industrial silicon solar cell is described, as well as the preparation of surfaces and the fundamental procedure for manufacturing an industrial solar cell.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Models for contacts to planar devices
TL;DR: In this article, two basic models for rectangular contacts to planar devices, the Kennedy-Murley Model (KMM) and the Transmission Line Model (TLM), are discussed and compared.
Journal ArticleDOI
Obtaining the specific contact resistance from transmission line model measurements
G.K. Reeves,H.B. Harrison +1 more
TL;DR: In this article, it was shown that the contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
Journal ArticleDOI
Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
C.R. Crowell,V.L. Rideout +1 more
TL;DR: In this paper, a quasi-one-dimensional approach and Maxwell-Boltzmann statistics are used to obtain a normalized solution in closed form for the forward and reverse current (I)-voltage (V) relationship.
Journal ArticleDOI
Specific contact resistance of metal-semiconductor barriers
TL;DR: In this article, the specific contact resistance at zero bias, R c, is calculated for metal-Si and metal-GaAs barriers on p-type and n-type samples.