Journal ArticleDOI
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer
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In this paper , an aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate and the epitaxial AlN layer was etched down to the n-Al0.9Ga0.1N layer to form an Ohmic contact.Abstract:
An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al0.9Ga0.1N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al0.9Ga0.1N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al0.9Ga0.1N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al0.9Ga0.1N layer, capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the AlN SBD were investigated.read more
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Temperature-dependent current transport in quasi-vertical Pt/AlN/Al0.6Ga0.4N heterostructure Schottky barrier diodes with significant improved forward characteristic
TL;DR: In this paper , quasi-vertical Schottky barrier diodes (SBDs) based on AlN/Al0.6Ga0.4N heterostructure are fabricated and temperature-dependent current transport is systematically investigated.
Journal ArticleDOI
Mg implantation in AlN layers on sapphire substrates
Hironori Okumura,Akira Uedono +1 more
TL;DR: In this paper , Mg ions were implanted in 1 μm thick AlN layers grown on sapphire substrates and annealing temperatures over 1400 °C were necessary for an electrically conductive Mgimplanted AlN layer.
Journal ArticleDOI
Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates
TL;DR: In this paper , Schottky-barrier diodes and metal-semiconductor field effect transistors with Si-implanted AlN channels can operate at 1100 K and 1000 K, respectively.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
TL;DR: An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
Journal ArticleDOI
Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Journal ArticleDOI
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Ziyi Zhang,Ziyi Zhang,Maki Kushimoto,Tadayoshi Sakai,Naoharu Sugiyama,Leo J. Schowalter,Chiaki Sasaoka,Hiroshi Amano +7 more
TL;DR: In this paper, a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength was presented, achieving a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate.