Journal ArticleDOI
Ambipolar organic field-effect transistors based on rubrene single crystals
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In this article, the authors reported ambipolar organic field-effect transistors based on rubrene single crystals, which operate in both the p-and n-channel regimes depending upon the bias conditions.Abstract:
We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p- and n-channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1×10−2cm2∕Vs, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.read more
Citations
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Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.
TL;DR: The focus of this review will be on the performance analysis of π-conjugated systems in OFETs, a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals that provide an important insight into the charge transport of ρconjugate systems.
Journal ArticleDOI
Electron and ambipolar transport in organic field-effect transistors.
Journal ArticleDOI
The larger acenes: versatile organic semiconductors.
TL;DR: New approaches to add functionality were developed to improve the processability of these materials in solution, allowing the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied.
Journal ArticleDOI
High-Performance Organic Field-Effect Transistors
Daniele Braga,Gilles Horowitz +1 more
TL;DR: In this article, a review of the state-of-the-art organic field effect transistors is presented, focusing on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric-semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes.
References
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Book
Electronic Processes in Organic Crystals and Polymers
Martin Pope,Charles E. Swenberg +1 more
TL;DR: The first edition of the Electronic Processes of Organic Crystals, published in 1982, became the classic reference in the field and has been expanded to cover the major theoretical and experimental advances over the last fifteen years.
Journal ArticleDOI
Intrinsic Charge Transport on the Surface of Organic Semiconductors
Vitaly Podzorov,Etienne Menard,A. Borissov,Valery Kiryukhin,John A. Rogers,Michael Gershenson +5 more
TL;DR: The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range.
Journal ArticleDOI
Electrically Induced Optical Emission from a Carbon Nanotube FET
TL;DR: Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotubes, consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts.