Proceedings ArticleDOI
An accurate calorimetrie method for measurement of switching losses in silicon carbide (SiC) MOSFETs
Anup Anurag,Sayan Acharya,Yos Prabowo,Ghanshyamsinh Gohil,Hulgize Kassa,Subhashish Bhattacharya +5 more
TLDR
In this article, an accurate calorimetric method for measuring the switching losses in SiC MOSFETs is presented, where a novel modulation scheme is introduced which enables the separation of turn-on and turn-off switching losses.Abstract:
An accurate measurement of switching losses in SiC MOSFETs is necessary in order to design and evaluate the thermal performance of modern converter systems. Conventionally, electrical measurement methods, such as the double-pulse test (DPT) are used for calculating the hard-switching losses. However, with the advent of wide-bandgap devices, which have fast switching transients, it is rather difficult to capture the waveforms accurately during switching transitions, and consequently the measurement of switch loss suffers. This paper presents an accurate calorimetric method for measuring the switching losses. The conventional calorimetric measurement methods can accurately measure the device losses. However, the segregation of the conduction, turn-on and turn-off loss is not possible. This paper addresses this issue and proposes a method that can be used to determine individual loss components. The calorimetric test setup is described and a novel modulation scheme is introduced which enables the separation of turn-on and turn-off switching losses. The experimental test setup has been built and the method has been verified by measuring the losses of a Wolfspeed CMF10120D device.read more
Citations
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Journal ArticleDOI
Achieving Zero Switching Loss in Silicon Carbide MOSFET
TL;DR: In this paper, an accurate switching loss model is established which highlights the dependence of the switching loss on the gate driving condition, with extreme fast gate driving conditions, several loss limitations can be established.
Journal ArticleDOI
An Accurate Calorimetric Loss Measurement Method for SiC MOSFETs
TL;DR: In this paper, an accurate calorimetric method for measuring the device losses, which can be used to determine individual loss components accurately (conduction, turn-on, and turn-off losses).
Proceedings ArticleDOI
Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements
Julian Weimer,Ingmar Kallfass +1 more
TL;DR: In this paper, the authors present empirical power dissipation data for high voltage GaN and SiC power semiconductors of low power class at application-oriented switching frequencies for zero voltage switching (ZVS) operation.
Proceedings ArticleDOI
Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation
TL;DR: In this paper, a detailed accuracy analysis of calorimetric measurements for benchmarking wide bandgap power transistors under soft-switching operation is presented, and enhancements to ensure higher accuracy of the extracted switching energy by evaluating the whole measurement and calculation chain are proposed.
Journal ArticleDOI
Discrete Power Semiconductor Losses Versus Junction Temperature Estimation Based on Thermal Impedance Curves
TL;DR: In this article, a dynamic calorimetric method was proposed to estimate the losses in power semiconductor devices, taking into account their evolution as a function of the junction temperature.
References
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Journal ArticleDOI
Thermal Performance and Reliability Analysis of Single-Phase PV Inverters With Reactive Power Injection Outside Feed-In Operating Hours
TL;DR: In this paper, the impact of reactive power injection by PV inverters outside feed-in operation on the thermal performance of their power switching components was analyzed, and an analytical lifetime model was used.
Proceedings ArticleDOI
Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration
TL;DR: In this paper, a double pulse tester (DPT) is proposed to evaluate the switching behavior of power devices in a phase-leg configuration by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor.
Journal ArticleDOI
Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC mosfets and Diodes
TL;DR: In this article, the authors presented an accurate and reliable calorimetric method for the determination of soft-switching losses using the example of 10-kV SiC mosfet modules.
Journal ArticleDOI
Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter
Samir Hazra,Sachin Madhusoodhanan,Giti Karimi Moghaddam,Kamalesh Hatua,Subhashish Bhattacharya +4 more
TL;DR: In this paper, a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs is presented, which is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and corresponding experimental results are presented.
Proceedings ArticleDOI
Comprehensive evaluation of GaN GIT in low- and high-frequency bridge leg applications
TL;DR: In this paper, a simple and reliable gate drive circuit for driving GaN switches is presented, and the proposed gate drive is used to evaluate the switching performance of a GaN Gate Injection Transistor (GIT) under soft and hard switching condition, which provides a basis for further optimization of totem-pole converter systems.
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