Journal ArticleDOI
An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2
Y T Yeow,D R Lamb,S D Brotherton +2 more
TLDR
In this paper, the three different interface state annealing processes widely used in MOS technology have been investigated using both quasistatic capacitance-voltage measurements and MOST characteristics.Abstract:
The three different interface state annealing processes widely used in MOS technology have been investigated using both quasistatic capacitance-voltage measurements and MOST characteristics. It appears that annealing in a hydrogen-nitrogen and a wet nitrogen ambient is found to produce a more rapid reduction of the interface state density. The latter process is, however, more likely to cause ionic contamination of the oxide. For the achievement of the minimum interface state density with any of the three annealing treatments a 1000 degrees C anneal in dry nitrogen after oxidation is found to be essential.read more
Citations
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Journal ArticleDOI
Characterization of defects in Si and SiO2−Si using positrons
TL;DR: In this article, the positron annihilation spectroscopy (PAS) was used as a non-destructive probe to examine defects in technologically important Si-based structures, including the quality of overlayers, formation and annealing of defects after ion implantation, identification of defect complexes, and evaluation of the distribution of internal electric fields.
Journal ArticleDOI
Chemistry of Si‐SiO2 interface trap annealing
Michael L. Reed,James D. Plummer +1 more
TL;DR: The kinetics and chemistry of SiSiO2 interface trap annealing were examined in detail in this paper, with several process variables as parameters: oxide thickness, anneal ambient, temperature, bulk carrier type, metallization damage, and orientation.
Journal ArticleDOI
Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on Silicon
TL;DR: In this article, it is suggested that hydrogen present in various forms in the oxide film plays a crucial and complex role in the irradiation behavior of Si/SiO2 interface structures.
Journal ArticleDOI
Annealing of surface states in polycrystalline‐silicon–gate capacitors
TL;DR: In this paper, the effect of annealing in nitrogen and forming gas at temperatures between 300 and 850°C on these instabilities as well as on surface states Nss and surface charge Qss has been studied.
Journal ArticleDOI
Response of interface traps during high-temperature anneals (MOSFETs)
TL;DR: Isochronal-annealing measurements were performed on n-channel Si-gate metal-oxide-semiconductor field effect transistors (MOSFETs) to determine the temperature at which interface traps anneal following exposure to 10-keV X-rays as discussed by the authors.
References
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Journal ArticleDOI
A quasi-static technique for MOS C-V and surface state measurements
TL;DR: In this paper, a quasi-static technique is proposed to obtain the thermal equilibrium MOS capacitance-voltage characteristics. The method is based on a measurement of the MOS charging current in response to a linear voltage ramp, so that the charging current is directly proportional to the incremental MOS capacity.
Journal ArticleDOI
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné,A. Vapaille +1 more
TL;DR: In this paper, the authors measured the apparent interface density in the whole band gap of silicon and showed that the apparent inteiface density can contain a contribution of defects unspecific of the interface, for instance, spatial fluctuation of the interfaces or silicon defects introducing a deep level in the band gap.
Journal ArticleDOI
Characteristics of Fast Surface States Associated with SiO2 ‐ Si and Si3 N 4 ‐ SiO2 ‐ Si Structures
Journal ArticleDOI
Surface states in silicon from charges in the oxide coating
TL;DR: The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide as mentioned in this paper, where single charges give rise to peaks in surface state densities close to the band edges, deeper levels are introduced by two charges in close proximity.
Journal ArticleDOI
Hydrides and Hydroxyls in Thin Silicon Dioxide Films
K. H. Beckmann,N. J. Harrick +1 more
TL;DR: In this paper, the hydroxyl content of anodically and thermally grown silicon dioxide films by internal reflection spectroscopy in the infrared was determined and the concentration of these compounds within freshly formed anodic and thermal films was given.