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Anisotropic electrical resistivity during annealing of oriented columnar titanium films

TLDR
In this article, the authors report on the evolution of anisotropic electrical resistivity versus temperature of titanium thin films and measure the components of the conductivity tensor by the van der Pauw method during annealing treatment in air ranging from 298 to 873 K.
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This article is published in Materials Letters.The article was published on 2013-08-15 and is currently open access. It has received 26 citations till now. The article focuses on the topics: Van der Pauw method & Titanium.

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Citations
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Journal ArticleDOI

Improvement of ozone detection with GLAD WO3 films

TL;DR: In this paper, the GLAD technique was implemented to transform the typical dense microstructure into an inclined columnar and porous architecture of Tungsten oxide WO 3 thin films by dc reactive magnetron sputtering.
Journal ArticleDOI

Influence of the sputtering pressure on the morphological features and electrical resistivity anisotropy of nanostructured titanium films

TL;DR: In this paper, the authors used the Glancing Angle Deposition (GLAD) technique with increasing sputtering pressures from 0.2 to 1.5 to study the anisotropic electrical resistivity behavior of different thin film nanostructures.
Journal ArticleDOI

Nano-sculptured Janus-like TiAg thin films obliquely deposited by GLAD co-sputtering for temperature sensing

TL;DR: Inclined, zigzag and spiral TiAg films were prepared by glancing angle co-deposition, using two distinct Ti and Ag targets with a particle incident angle of 80° and Ag contents ranging from 20 to 75 at%.
Journal ArticleDOI

Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu.

TL;DR: This work introduces a detailed methodology to probe in situ or ex situ the local resistivity of individual GBs in Cu, a metallic model system the authors choose due to its low resistance.
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Characterization of electro-conductive textile materials by its biaxial anisotropy coefficient and resistivity

TL;DR: In this paper, the Van der Pauw equation modified by Wasscher for anisotropic materials was used to determine the electrical conductivity of woven and knitted fabrics, and the electrical resistivity of the fabrics indicated that they can be used as paths for conveying electrical signals.
References
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Journal ArticleDOI

The electrical properties of polycrystalline silicon films

TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI

Glancing angle deposition: Fabrication, properties, and applications of micro- and nanostructured thin films

TL;DR: In this paper, the origin of the columnar structure characteristic of GLAD films is discussed in terms of nucleation processes and structure zone models, and the column shape evolves during growth, and power-law scaling behavior is observed as shown in both experimental results and theoretical simulations.
Journal ArticleDOI

Electrical conduction in concentrated disordered transition metal alloys

TL;DR: In this article, the origin of the low temperature coefficient of resistance in NiCr thin films is investigated, and it is shown that this coefficient is an intrinsic property of the alloy.
Journal ArticleDOI

Method for Measuring Electrical Resistivity of Anisotropic Materials

TL;DR: In this paper, a rectangular prism with edges in principal crystal directions is prepared with electrodes on the corners of one face, and voltage-current ratios for opposite pairs of electrodes permit calculation of components of the resistivity tensor.
Journal ArticleDOI

Structural evolution and optical properties of TiO2 thin films prepared by thermal oxidation of sputtered Ti films

TL;DR: In this article, a dense rutile TiO2 thin film was synthesized by the thermal oxidation of a sputtered titanium metal film in ambient air, and the effects on optical properties of TiO 2 films of the crystal structure and microstructural evolution at various oxidation temperatures were investigated.
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Frequently Asked Questions (15)
Q1. What have the authors contributed in "Anisotropic electrical resistivity during annealing of oriented columnar titanium films" ?

The authors report on the evolution of anisotropic electrical resistivity versus temperature of titanium thin films. An oriented titanium film ( 1 μm thick ) is sputter deposited by GLancing Angle Deposition ( GLAD ) using an incident angle α = 80° of the particle flux. The authors measure the components of the conductivity tensor by the van der Pauw method during an annealing treatment in air ranging from 298 to 873 K. 

Since a very high porous architecture is especially favored for grazing incident angles of the particle flux (α > 70°), the number of electrical pathways available for the free carriers are reduced leading to a decrease of the electron mean free path. 

Due to the high porous structure of the GLAD films [11], scattering is particularly favored at the column interfaces reducing the electronic transport properties. 

In addition, GLAD deposition of columnar films with incident angles close or higher than 60° gives rise to a significant structural and uniaxial anisotropy in the substrate plane induced by the shadowing effect [19]. 

For the first cycle, the return to the room temperature gives rise to a linear evolution of ρ versus T and the resistivity is down to ρ298 = 7.24×10-6 

The oxidation only occurs on the surface of the conventional Ti film (α = 0°) whereas it becomes significant through the thickness of the GLAD Ti film due to its high porous structure [15]. 

In the end, the concentration of hopping sites falls below the threshold for percolation and the resistivity becomes too high to be measured by the vdP technique. 

Price [6] showed that the method may be applied to anisotropic materials provided that one of the principal axes of the resistivity tensor is perpendicular to the plane of the sample. 

It supports the formation of a TiO1+ε-like compound since the resistivity ρyy remains in the order of magnitude of metallic compounds. 

Further annealing treatments (2nd to 5th cycles) reduce the metallic-like character of the film since the resistivity reaches ρ298 = 1.83×10-5 

A further increase of the temperature up to 473 K leads to a non linear evolution of the resistivity versus temperature since ρ473K reaches 8.11×10-6 

it should be reminded that their system is composed of Ti stacks where two parallel strips of Ti deposited by conventional sputtering (α = 0°) cover the GLAD Ti film (α = 80°). 

This last annealing cycle leads to the most important jump of the electrical resistivity since 3 orders of magnitude separate resistivity values measured between the 8th and 9th cycle (axis break in Fig. 2). 

The anisotropy in their vdP configuration AvdP is defined as [7,9]:( )[ ] ( )[ ]∑ ∑ + + = − = −− × × == oddn eff oddn eff xx yy vdP nAn nAn R R A 1 1 1 sinh sinh π π(4)This equation (4) is used to calculate the effective anisotropy Aeff. 

An extension ofthe van der Pauw method has been applied to get resistivities ρxx and ρyy in the mutually perpendicular directions x,y of the two-dimensional plane and the anisotropic coefficient during incremental annealing cycles in air (from 298 to873K).