Journal ArticleDOI
Annealing and light induced changes in the field effect conductance of amorphous silicon
TLDR
In this paper, the authors measured the field effect conductance of α-Si:H and its dependence on annealing to 180°C and illumination with white light, and found that illumination produces changes in the Fermi level with respect to the conduction band mobility edge.Abstract:
We have measured the field effect conductance of α‐Si:H and its dependence on annealing to 180 °C and illumination with white light. We find that illumination produces changes in the field effect conductance which are completely reversed by annealing. Illumination produces a decrease in the off conductance between a factor of 5 and 30 times, together with a shift of the threshold voltage. We interpret the effect of illumination as a modification of the density or occupancy of deep states in such a way that the bulk Fermi level is moved with respect to the conduction band mobility edge. Space‐charge regions can exist at either or both interfaces of the α‐Si:H film and these are very sensitive to interface conditions. The magnitude of the surface band bending is modified by electron trapping in the gate insulator (SiN), which is brought about by bias‐ temperature stressing. Annealing to 180 °C causes the detrapping of excess electrons in the SiN layer, reversing the effect of positive bias‐temperature stres...read more
Citations
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Journal ArticleDOI
The physics of amorphous-silicon thin-film transistors
TL;DR: In this paper, the basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors are discussed, and the transistors also show longer time threshold voltage shifts due to two distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation.
Journal ArticleDOI
Physics of amorphous silicon based alloy field‐effect transistors
Michael Shur,M. Hack +1 more
TL;DR: In this article, the authors developed a new theory to describe the characteristics of amorphous silicon based alloy field effect transistors and showed that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap.
Journal ArticleDOI
Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors
TL;DR: In this article, bias dependence of the threshold voltage shift in a series of amorphous silicon-silicon nitride thin-film transistors was measured, where the composition of the nitride is varied.
Journal ArticleDOI
Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
TL;DR: In this paper, constantvoltage bias (VDS = VGS = 30 V) stress measurements are performed for a period of 105 s on thin-film transistors (TFTs) with amorphous indium-gallium-zincoxide (IGZO) channel layers fabricated via RF sputtering using a postdeposition annealing temperature of 200degC, 250degC or 300degC.
Journal ArticleDOI
Electronic structure of amorphous semiconductors
TL;DR: In this paper, a wide range of non-crystalline materials, such as the elemental and compound amorphous semiconductors, liquid semiconductor, and oxide glasses, are discussed.
References
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BookDOI
Amorphous and liquid semiconductors
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
Journal ArticleDOI
Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler,C. R. Wronski +1 more
TL;DR: In this paper, a new reversible photoelectronic effect was reported for amorphous Si produced by glow discharge of SiH4, where long exposure to light decreases both the photoconductivity and the dark conductivity.
Journal ArticleDOI
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
TL;DR: In this article, the number and nature of the silicon-hydrogen bonds in amorphous silicon films prepared in plasmas either of silane or of hydrogen and argon were studied.
Journal ArticleDOI
Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
D.L. Staebler,C. R. Wronski +1 more
TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.
Journal ArticleDOI
Light-induced dangling bonds in hydrogenated amorphous silicon
H. Dersch,J. Stuke,J. Beichler +2 more
TL;DR: In this article, the authors showed that after intensive and long illumination of undoped a−Si:H samples, the dark ESR signal was considerably enhanced, and they concluded that the light-induced defects are single dangling bonds.
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