Journal ArticleDOI
Atomic transport in Cu/Ge and Co/Ge systems during ion-beam mixing
Sankar Dhar,Vishwas N. Kulkarni +1 more
TLDR
In this article, the atomic transport occurring across the interface of Cu/Ge and Co/Ge layers leading to the synthesis of Cu 3 Ge and Co 2 Ge phases under MeV Kr and Ar ion irradiations was reported.About:
This article is published in Thin Solid Films.The article was published on 1998-11-25. It has received 17 citations till now. The article focuses on the topics: Ion beam mixing.read more
Citations
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Journal ArticleDOI
Surface studies of phase formation in Co–Ge system: Reactive deposition epitaxy versus solid-phase epitaxy
Ilan Goldfarb,G. A. D. Briggs +1 more
TL;DR: In this paper, the evolution of cobalt germanide epilayers, CoxGey, was investigated in situ by scanning tunneling microscopy and spectroscopy and reflection high-energy electron diffraction, as a function of deposition method and, hence, the phase content of the epilayer.
Journal ArticleDOI
Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties
Antony Premkumar Peter,L. Carbonell,Marc Schaekers,Christoph Adelmann,Johan Meersschaut,Alexis Franquet,Olivier Richard,Hugo Bender,Tokei Zsolt,Sven Van Elshocht +9 more
TL;DR: In this paper, the authors report on the synthesis of Cu3Ge films by exposing Cu films to germane (GeH4) by investigating the influence of the GeH4 partial pressure, the soak temperature, and the soak time on Cu films of different thicknesses.
Journal ArticleDOI
Interface modification in Co∕Ge bilayer using swift heavy ions
TL;DR: In this article, interface modification in Co-Ge bilayer system using 100MeV Au7+ ion irradiation at different temperatures and fluences is studied by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy.
Journal ArticleDOI
Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction
TL;DR: In this article, the growth of ultrathin Fe films of various coverages on Ge(1.1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction, and XPS results suggested local order structures of the Fe layers for all thicknesses studied.
Journal ArticleDOI
Swift heavy ion-induced interface mixing in In/Sb
R. Sreekumar,P. M. Ratheesh Kumar,C. Sudha Kartha,K.P. Vijayakumar,D. Kabiraj,Sumsullah Khan,D. K. Avasthi,Y. Kashiwaba,Takami Abe +8 more
TL;DR: In this paper, high-resolution x-ray diffraction measurements indicated that both In and Sb were embedded in the Si substrate with an irradiation dose of 3 × 1013 ions cm−2.
References
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Journal ArticleDOI
A Monte Carlo computer program for the transport of energetic ions in amorphous targets
J.P. Biersack,L.G. Haggmark +1 more
TL;DR: In this article, a Monte Carlo computer program was developed for determining ion range and damage distributions as well as angular and energy distributions of backscattered and transmitted ions in amorphous targets.
Journal ArticleDOI
Unusually low resistivity of copper germanide thin films formed at low temperatures
TL;DR: In this paper, the authors reported the first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200 °C, with room-temperature resistivity which can be as low as 5.5 μΩ cm.
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Novel low‐resistance ohmic contact to n‐type GaAs using Cu3Ge
TL;DR: In this article, the e1−Cu3Ge contact was shown to have a planar and abrupt interface and contact resistivity of 6.5×10−7 Ω cm2 which is considerably lower than that reported for Ge/Pd and AuGeNi contacts on n-type GaAs with similar doping concentrations.
Journal ArticleDOI
Compound formation under local thermal spikes during ion-beam mixing: Model and its experimental verification.
Journal ArticleDOI
Room‐temperature synthesis of copper germanide phase by ion beam mixing
TL;DR: In this article, room temperature synthesis by ion beam mixing of the e1•Cu3Ge phase was reported. But the phase formation process was not discussed. And the phase resistivity of the mixed sample was found to be nearly the same as the one obtained from thermally prepared films.