scispace - formally typeset
Open AccessJournal ArticleDOI

Band-structure topologies of graphene: Spin-orbit coupling effects from first principles

TLDR
In this paper, the electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field was investigated from first principles using the linearized augmented plane-wave method.
Abstract
The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap of $24\text{ }\ensuremath{\mu}\text{eV}$ (0.28 K) at the $K({K}^{\ensuremath{'}})$ point. It is shown that the previously accepted value of $1\text{ }\ensuremath{\mu}\text{eV}$, coming from the $\ensuremath{\sigma}\text{\ensuremath{-}}\ensuremath{\pi}$ mixing, is incorrect due to the neglect of $d$ and higher orbitals whose contribution is dominant due to symmetry reasons. The transverse electric field induces an additional (extrinsic) Bychkov-Rashba-type splitting of $10\text{ }\ensuremath{\mu}\text{eV}$ (0.11 K) per V/nm, coming from the $\ensuremath{\sigma}\text{\ensuremath{-}}\ensuremath{\pi}$ mixing. A ``miniripple'' configuration with every other atom shifted out of the sheet by less than 1% differs little from the intrinsic case.

read more

Citations
More filters
Journal ArticleDOI

Graphene Spintronics

TL;DR: The experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene are reviewed.
Journal ArticleDOI

Spintronics and pseudospintronics in graphene and topological insulators.

TL;DR: The status of efforts to achieve long spin-relaxation times in graphene with its weak spin- orbit coupling, and to achieve large current-induced spin polarizations in topological-insulator surface states that have strong spin-orbit coupling are reviewed.
Journal ArticleDOI

The electronic properties of bilayer graphene.

TL;DR: The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and the also discusses orbital magnetism, phonons and the influence of strain on electronic properties.
Journal ArticleDOI

Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces

TL;DR: This work discusses SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures and puts into context the technological promise of these material classes for developing spin-based device applications at room temperature.
Journal ArticleDOI

Topological phases in two-dimensional materials: a review.

TL;DR: In this article, the authors mainly focus on recent progress in the engineering of topologically nontrivial phases (such as topological insulators, quantum anomalous Hall effects, quantum valley Hall effects etc) in two-dimensional systems.
References
More filters
Related Papers (5)