Journal ArticleDOI
Bipolar doping and band-gap anomalies in delafossite transparent conductive oxides.
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TLDR
It is shown that both properties are results of a large disparity between the fundamental gap and the apparent optical gap, a finding that could lead to a breakthrough in the study of bipolarly dopable wide-gap semiconductor oxides.Abstract:
Doping wide-gap materials p type is highly desirable but often difficult. This makes the recent discovery of p-type delafossite oxides, CuM(III)O2, very attractive. The CuM(III)O2 also show unique and unexplained physical properties: Increasing band gap from M(III) = Al,Ga, to In, not seen in conventional semiconductors. The largest gap CuInO2 can be mysteriously doped both n and p type but not the smaller gaps CuAlO2 and CuGaO2. Here, we show that both properties are results of a large disparity between the fundamental gap and the apparent optical gap, a finding that could lead to a breakthrough in the study of bipolarly dopable wide-gap semiconductor oxides.read more
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Inorganic Materials as Hole Selective Contacts and Intermediate Tunnel Junction Layer for Monolithic Perovskite-CIGSe Tandem Solar Cells
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First-principles study of CuAlS2 for p-type transparent conductive materials
TL;DR: In this paper, the authors investigated the intrinsic defects and Mg, Zn impurities in CuAlS2, as well as their induced carrier concentrations using the first-principles calculations.
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High resolution X-ray photoemission of SrCu2O2
TL;DR: In this article, the Fermi level in nominally undoped material is pinned by acceptor states 0.24 eV above the valence band edge, but moves toward the Valence band with increasing doping.
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The effects of Bi alloying in Cu delafossites: A density functional theory study
TL;DR: In this paper, the effects of Bi alloying on the electronic and optical properties of Cu delafossites by density functional theory were investigated and it was shown that the lone pair Bi-6s electrons create occupied delocalized anti-bonding states on the top of the valence band, leading to improved hole mobility.
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Design of p -type transparent conductors from inverted band structure: The case of inorganic metal halide perovskites
TL;DR: In this article, a class of wide-gap inorganic metal halide perovskites have been proposed as ideal $p$-type transparent conductors, i.e., they have $s$-like wave-function character at the top of the valence band, and $ p$like wave function character at lower valence bands and the bottom of the conduction band.