Journal ArticleDOI
Blended polymer as composite insulating layers for organic field effect transistor
TLDR
In this paper , the effects of polystyrene (PS), poly (vinyldifluoride) (PVDF), polyvinylphenyl (PVP) blended with poly (methylmethacrylate) (PMMA) on the properties of insulating layers were studied.Abstract:
Organic field effect transistors based on blended polymer insulators were fabricated. The effects of polystyrene (PS), poly (vinyldifluoride) (PVDF) and poly (vinylphenyl) (PVP) blended with poly (methylmethacrylate) (PMMA) on the properties of insulating layers were studied. The PMMA:PS films have spherical grains, the PMMA:PVP films exhibit porous pit morphology, and the PMMA:PVDF films still show plane morphology. The morphology of insulating layers can affect the crystallization of organic semiconductors. Meanwhile, the performance of OFET devices indicates that polymer doping decreases the threshold voltage of devices. When the mass ratio of PMMA:PVDF is 10:5, the threshold voltage of OFET devices is about −14.7 V, which is significant lower than that of pure PMMA devices. This is attributed to the larger capacitance and lower roughness of the insulating layers. Therefore, it is a convenient and effective method to optimize the threshold voltage of OFET devices by applying blended polymer insulating layers. read more
Citations
More filters
Journal ArticleDOI
Morphological, structural, optical, broadband frequency range dielectric and electrical properties of PVDF/PMMA/BaTiO3 nanocomposites for futuristic microelectronic and optoelectronic technologies
TL;DR: In this paper , a fixed composition blend of polyvinylidene fluoride (PVDF) and plexiglass polymer poly(methyl methacrylate) (PMMA) with barium titanate (BaTiO3) ceramic nanofiller of varying concentrations (x = 0, 2.5, 5, 10, and 15 wt%) were prepared via a state-of-the-art solution-cast method.
References
More filters
Journal ArticleDOI
Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.
TL;DR: Recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon.
Journal ArticleDOI
High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang,Binghao Wang,Wei Huang,Lifeng Chi,Mohammed Al-Hashimi,Tobin J. Marks,Antonio Facchetti +6 more
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Journal ArticleDOI
PVDF-Based Ferroelectric Polymers in Modern Flexible Electronics
Xin Chen,Xu Han,Qun-Dong Shen +2 more
TL;DR: In this paper, a review of polyvinylidene fluoride (PVDF)-based polymers is presented, including nonvolatile memories, energy-harvesting devices, and multifunctional portable sensors.
Journal ArticleDOI
Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory
TL;DR: An electret is a piece of dielectric material that exhibits aquasi-permanent electrical charges or dipolar polarization, including ferro-, piezo-, and pyro-electric polymers as discussed by the authors.
Journal ArticleDOI
Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate insulator.
Jinhua Li,Zhenhua Sun,Feng Yan +2 more
TL;DR: It is notable that many high-mobility and solution-processable conjugated polymers have not been used in low-voltage field effect transistors with expected mobilities because of the lack of suitable gate dielectrics.[19] Ideal gate dieLECTric materials for OTFTs should be solution processable at low temperature, flexible, and suitable for different device structures, such as bottom-gate and top-gate devices.