Journal ArticleDOI
Buried heterojunction electroabsorption modulator
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TLDR
In this paper, the authors describe the successful operation of a buried heterojunction electroabsorption modulator, fabricated from AlyGa1−yAs 1−xSbx/GaAs1−x′SbX′, which is particularly well suited for use with narrow spectral width sources such as the Nd :Abstract:
We describe the successful operation of a buried heterojunction electroabsorption modulator. This modulator, fabricated from AlyGa1−yAs1−xSbx/GaAs1−x′Sbx′, is particularly well suited for use with narrow spectral width sources such as the Nd : YAG fiber lasers. The GaAs1−x′Sbx′ crystal composition can be adjusted to permit operation in the wavelength range 0.9–1.2 μm. At 1.06 μm we have obtained an extinction ratio of 13 dB and a projected insertion loss of 4.0 dB. The low device capacitance permits operation at greater than 900 MHz.read more
Citations
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Journal ArticleDOI
Guided-wave devices for optical communication
TL;DR: In this paper, the current status of guided-wave optical communication devices is reviewed and the operation and presently demonstrated performance characteristics of waveguides switches, modulators, filters and polarization transforming devices are discussed.
Journal ArticleDOI
Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy
TL;DR: In this paper, a 1.55-μm InGaAsP/InP distributed feedback (DFB) laser and an electroabsorption (EA) modulator were integrated by three-step vapor phase epitaxy (VPE).
Journal Article
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R.C. Williamson,R.D. Esman +1 more
TL;DR: The 1970s and 1980s saw the development of techniques for the transmission of wide-bandwidth analog radio-frequency signals over optical fibers inspired by the simultaneous need for high linearity and high signal-to-noise in RF photonic links.
Journal ArticleDOI
High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguide
TL;DR: In this article, an electroabsorption (EA) light modulator (LM) with a strip-loaded GaInAsP planar waveguide has been described, and a 3dB bandwidth of 3.8 GHz has been achieved and a pulse modulation operation under 2 Gbit/s nonreturn-to-zero (NRZ) pseudorandom pattern has also been confirmed.
Journal ArticleDOI
Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulators
TL;DR: In this article, an InGaAsP/InP integrated light source composed of DFB lasers and electroabsorption modulators was studied, and the authors showed that an isolation resistance between the laser and the modulator should be as large as 100 k Omega or more in order to reduce a lasing wavelength shift associated with biasing the modulators.
References
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Journal ArticleDOI
GaAs–Ga1−xAlxAs buried‐heterostructure injection lasers
TL;DR: In this article, a two-step liquid phase phase-epitaxial (LPEP) injection laser with the active regions of the filamentary GaAs active regions completely surrounded by Ga1−xAlxAs was proposed.
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Optical Absorption in the Presence of a Uniform Field
TL;DR: In this paper, the authors derived expressions for the absorption coefficient in the presence of a uniform field, of semiconductors and insulators for both allowed and forbidden transitions, expressed in terms of Airy functions, and the limiting cases examined indicate the tunneling mechanism as a possible explanation for the experimentally observed longwavelength tails.
Journal ArticleDOI
Pulse delay measurements in the zero material dispersion wavelength region for optical fibers.
Leonard George Cohen,Chinlon Lin +1 more
TL;DR: Subnanosecond pulses in the 1120-1550-nm region are generated by multiple-order stimulated Raman scattering in a small core single-mode silica fiber pumped by a Q-switched and mode-locked Nd:YAG laser.
Journal ArticleDOI
Effect of dopants on transmission loss of low-OH-content optical fibres
TL;DR: In this paper, the effects of dopants in pure silica on the losses of optical fibres were investigated and the results showed that the effect of the dopants on the loss in the near-infrared region was negligible.
Journal ArticleDOI
Electroabsorption in Aly Ga1−y As–Alx Ga1−x As double heterostructures
TL;DR: The electroabsorption observed in AlyGa1−yAs−Alx Ga1−xAs (y < x) double heterostructures is strongly polarization dependent as mentioned in this paper.