A new type of buried heterostructure InGaAsP/InP lasers grown by a single‐step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2‐μm‐wide active region.

Semiconductor lasers operating in the wavelength range of 1.1–1.65 µm can be fabricated using the InGaAsP quaternary material which has been grown lattice-matched on an InP substrate.1 Room-temperature continuous operation of InGaAsP-InP double-heterostructure lasers was first reported2 in 1976. Since then, a large number of laser structures have been developed guided by the performance requirements of specific applications. This chapter discusses different InGaAsP laser structures with particular emphasis on their performance in terms of the light—current characteristics, the threshold current, and the threshold current’s temperature dependence. Other performance characteristics that make a laser structure suitable as a source for high-speed digital lightwave transmission systems are discussed in detail in Chapter 6.

Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

Laser Structures and Their Performance

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Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

Citations

Laser Structures and Their Performance

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