Journal ArticleDOI
Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
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In this article, the effects of short channel on double gate MOSFETs were studied and a self-consistent Poisson-Schrodinger solver in two dimensions over the entire device was used to evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length LCH decreases.Abstract:
In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length LCH decreases. Furthermore, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson-Schrodinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained.read more
Citations
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Journal ArticleDOI
Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
TL;DR: The design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems are analyzed and it is observed that the CSDG MOSfET stores more energy (1.4 times) as compared to the CSSG M OSFET, which has more stored energy.
Journal ArticleDOI
Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
TL;DR: A double-Gate MOSFET is designed and compared its performance parameters with the single-gate MOSfET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems.
Journal ArticleDOI
Organic field-effect transistors with cross-linked high-k cyanoethylated pullulan polymer as a gate insulator
Wentao Xu,Shi-Woo Rhee +1 more
TL;DR: In this paper, a low-voltage operable organic field-effect transistors (OFETs) were fabricated with a high-k polymer gate insulator, consisting of cyanoethylated pullulan (CEP) and poly(methylated melamine-co-formaldehyde) (PMMF) as a crosslinker.
Journal ArticleDOI
Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications
Meisam Rahmani,Mohammad Taghi Ahmadi,Mohammad Taghi Ahmadi,Hediyeh Karimi Feiz Abadi,Mehdi Saeidmanesh,Elnaz Akbari,Razali Ismail +6 more
TL;DR: The suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption and meets the International Technology Roadmap for Semiconductors near-term guidelines.
References
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Book
Modelling and Simulation
Louis G. Birta,Gilbert Arbez +1 more
TL;DR: In this article, the authors simulate the production of bioethanol by using conversion factor from starch into bio-ethanol, and apply it to the scenario of growing sago palm along river bank (up to 200 m, 400m, 600m, 800m, and 1000m).
Journal ArticleDOI
Ballistic metal-oxide-semiconductor field effect transistor
TL;DR: In this article, the authors proposed the ballistic transport of carriers in MOSFETs, and presented the currentvoltage characteristics of the ballistic n-channel MOS-FET.
Journal ArticleDOI
Essential physics of carrier transport in nanoscale MOSFETs
Mark Lundstrom,Zhibin Ren +1 more
TL;DR: In this paper, the physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall MOSFETs are examined. And the results show that the essential physics of nanoscale MOSFLETs can be understood in terms of a conceptually simple scattering model.
Journal ArticleDOI
Two-dimensional quantum mechanical modeling of nanotransistors
TL;DR: In this article, a framework for 2D quantum mechanical simulation of a nanotransistor/metal oxide field effect transistor is presented, which consists of the nonequilibrium Green's function equations solved self-consistently with Poisson's equation.
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