Journal ArticleDOI
Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications
TLDR
In this paper, various aspects of the organometallic VPE growth of GaAs and AlGaAs are discussed, including basic growth parameters, thickness and compositional uniformity, and doping characteristics.About:
This article is published in Journal of Crystal Growth.The article was published on 1981-12-01. It has received 32 citations till now. The article focuses on the topics: Solar cell.read more
Citations
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Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Journal ArticleDOI
A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide
TL;DR: A detailed analysis of the role of charged native point defects in controlling the solubility of electrically active dopants in gallium arsenide is presented in this article, where an equilibrium thermodynamic model based on these concepts is shown to accurately describe the doping behavior of Te, Zn, Sn, Ge, Si, and C and the formation and annealing of the deep level denoted EL2 (assumed to be the arsenic antisite defect AsGa).
Journal ArticleDOI
Metal-organic vapor phase epitaxy of compound semiconductors
TL;DR: The metal-organic vapor phase epitaxy (MOVPE) technique is emerging as the technique of choice in many applications to produce such exacting structures as mentioned in this paper, and the growth of epitaxial materials in the MOVPE technique is typically accomplished by the coreaction of reactive metal alkyls with a hydride of the non-metal component.
Patent
Preparation process of compound semiconductor
TL;DR: In this article, the authors proposed a method for growing a plurality of molecular layers one over another, where a carrier gas and a small quantity of hydride containing an element in Group V or VI are normally flowed.
Journal ArticleDOI
Zinc Doping of MOCVD GaAs
TL;DR: In this article, a study has been made of zinc doping in the TMG/AsH 3 system from 500 to 800°C and three distinct temperature regions have been identified; 500 to 575°C, 575 to 675 °C and 675 to 800 °C.
References
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Book
Boundary layer theory
TL;DR: The flow laws of the actual flows at high Reynolds numbers differ considerably from those of the laminar flows treated in the preceding part, denoted as turbulence as discussed by the authors, and the actual flow is very different from that of the Poiseuille flow.
Book
Fundamentals of Statistical and Thermal Physics
TL;DR: In this article, a discussion of some of the basic physical concepts and methods useful in the description of situations involving systems which consist of very many particulars is presented for the junior-senior thermodynamics course given in all departments as a standard part of the curriculum.
Fundamentals of Statistical and Thermal Physics
TL;DR: In this article, a discussion of some of the basic physical concepts and methods useful in the description of situations involving systems which consist of very many particulars is presented for the junior-senior thermodynamics course given in all departments as a standard part of the curriculum.
Journal ArticleDOI
Single-crystal gallium arsenide on insulating substrates
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Related Papers (5)
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more