Journal ArticleDOI
Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
Bantval Jayant Baliga,E. Sun +1 more
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TLDR
In this paper, a single dominant level recombination statistic was used to predict the relative characteristics of gold-diffused and electron-irradiated power rectifiers and thyristors.Abstract:
Recombination statistics based upon a single dominant level have been used to predict the relative characteristics of gold-diffused, platinum-diffused, and electron-irradiated silicon power rectifiers and thyristors. These calculations indicate that gold-diffused devices will have the best trade-off curve between forward voltage drop and reverse recovery time, while exhibiting the highest leakage currents. Electron-irradiated devices are predicted to have the worst trade-off curve among the three cases and twice the leakage current of platinum-diffused devices. The leakage current of platinum-diffused devices is shown to be an order of magnitude lower than gold-diffused devices. The measured characteristics of gold-diffused, platinum-diffused, and electron-irradiated power rectifiers are shown to be in good agreement with these calculations. The results are also shown to be applicable to power thyristors.read more
Citations
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Journal ArticleDOI
Energy Levels in Silicon
J. W. Chen,A. G. Milnes +1 more
TL;DR: A general review of energy levels in silicon covering information up to about 1972 appears in the book Deep Impurities in Semiconductors by A. G. Milnes.
Journal ArticleDOI
The concept of generation and recombination lifetimes in semiconductors
TL;DR: In this article, the concept of generation and recombination lifetimes is discussed and the regimes of device operation where they apply are discussed and it is shown experimentally for the first time that the two can be very different in magnitude.
Journal ArticleDOI
Voids in Silicon by He Implantation: From Basic to Applications
TL;DR: In this paper, the mechanism of bubble formation when He is implanted into silicon is described and many experiments are reviewed and several techniques are considered during implantation and subsequent annealing, complex Hen-Vm clusters are formed, trapping vacancies, while Si self-interstitials recombine directly at the surface.
Journal ArticleDOI
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
Katsunori Danno,Tsunenobu Kimoto +1 more
TL;DR: In this paper, deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS) and the Z1∕2 and EH6∕7 centers are dominant in as-grown samples.
Journal ArticleDOI
The future of power semiconductor device technology
TL;DR: Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions, and silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieve by using very large scale integration (VLSI) technology and trench gate regions.
References
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Journal ArticleDOI
Gold as a recombination centre in silicon
J.M. Fairfield,B.V. Gokhale +1 more
TL;DR: In this paper, the authors compared the low-level photoconductivity decay of gold-doped silicon samples with a theoretical expression derived from a transient solution of the recombination problem.
Journal ArticleDOI
Platinum as a lifetime‐control deep impurity in silicon
K. P. Lisiak,A. G. Milnes +1 more
TL;DR: In this article, transient capacitance measurements of emission rates determinations have been made of the electron capture cross section of the PtI acceptor in n-type Si, and of the hole capture cross sections of the PII acceptor and the Pt donor in p−type Si.
Journal ArticleDOI
Experimental verification of the Shockley--Read--Hall recombination theory in silicon
TL;DR: In this article, the dependence of carrier lifetime on injection level has been measured in silicon power devices and the results of an Au-doped and an as-processed, not intentionally doped, specimen are given.
Proceedings ArticleDOI
Use of platinum for lifetime control in power devices
TL;DR: In this paper, the diffusion of Pt into Si at temperatures between 800 and 1000°C has been found to provide room-temperature minority-carrier lifetimes between 1 µsec and 10 nsec.
Journal ArticleDOI
Control of diffused diode recovery time through gold doping
J.M. Fairfield,B.V. Gokhale +1 more