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Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films
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In this paper, electron transport data was correlated with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition.Abstract:
We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi levelmore » only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.« lessread more
Citations
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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
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Nanoceramic VO2 thermochromic smart glass: A review on progress in solution processing
Yanfeng Gao,Hongjie Luo,Zongtao Zhang,Litao Kang,Zhang Chen,Jing Du,Minoru Kanehira,Chuanxiang Cao +7 more
TL;DR: In this paper, the state-of-the-art solution processes used to prepare VO2 films, with a special emphasis on polymer-assisted deposition methods, are reviewed and compared with those prepared by gas-phase methods.
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Design of vanadium oxide structures with controllable electrical properties for energy applications
Changzheng Wu,Feng Feng,Yi Xie +2 more
TL;DR: This review presents an extensive review of the engineering of the microstructures of vanadium oxides with control of their electrical properties, and with attempts to rationally construct energy-related devices, such as aqueous lithium ion batteries, supercapacitors for energy storage, and thermoelectric generators for energy conversion.
Gas Sensor Based on Metal−Insulator Transition in VO 2 Nanowire Thermistor
TL;DR: Using temperature driven sharp metal-insulator phase transition in single crystal VO(2) nanowires, the realization of a novel gas sensing concept has been tested in this article.
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Depressed phase transition in solution-grown VO2 nanostructures.
TL;DR: It is demonstrated that the phase-transition temperature and hysteresis can be tuned by scaling VO(2) to nanoscale dimensions, which makes this material an attractive candidate for the fabrication of optical limiting elements, thermochromic coatings, and Mott field-effect transistors.
References
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Journal ArticleDOI
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
Journal ArticleDOI
Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
Sebastian Doniach,Marijan Šunjić +1 more
TL;DR: In this article, it was pointed out that the spectra of X-ray induced fast photoelectrons from metal should have a characteristic skew line shape resulting from Kondo-like many-electron interactions of the metallic conduction electrons with the accompanying deep hole in the final state.
Journal ArticleDOI
The two components of the crystallographic transition in VO2
TL;DR: In this article, two distinguishable mechanisms of the monoclinic-to-tetragonal transition in VO 2 are identified: an antiferroelectric-toparaelectric transition at a temperature T t as well as a change from homopolar to metallic VV bonding at T t.
Journal ArticleDOI
Oxygen 1s x-ray-absorption edges of transition-metal oxides
F. M. F. de Groot,Marco Grioni,John C. Fuggle,Jacques Ghijsen,George A. Sawatzky,Harald Petersen +5 more
TL;DR: On a mesure les limites d'absorption des rayons X de l'oxygene 1s d'une serie d'oxydes de metaux de transition 3d dans les etats inoccupes du caractere metallique principal.
Journal ArticleDOI
Metal-insulator transition in vanadium dioxide
A. Zylbersztejn,N. F. Mott +1 more
TL;DR: In this paper, the basic physical parameters which govern the metal-insulator transition in vanadium dioxide are determined through a review of the properties of this material, and the major importance of the Hubbard intra-atomic correlation energy in determining the insulating phase, which was already evidenced by studies of the magnetic properties of alloys, is further demonstrated from an analysis of their electrical properties.