Journal ArticleDOI
CoSi2 growth: Kinetics, phase sequence and mechanism
R. Pretorius,M.-C. Chen,H.A. Ras +2 more
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In the presence and absence of Au, very small amounts of Au (as little as 14 A at the Si Co interface) were found to increase the growth rate of CoSi2 dramatically and also caused a decrease in activation energy from 2.3 to 1.2 eV.About:
This article is published in Materials Letters.The article was published on 1985-05-01. It has received 18 citations till now. The article focuses on the topics: Growth rate.read more
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Thin film compound phase formation sequence: An effective heat of formation model
TL;DR: In this article, an effective heat of formation (EHF) model for predicting compound phase formation sequence is described, which is based on the Miedema's model and is used to predict first phase formation during formation of silicides, germanides, aluminides and other metal-metal binary systems.
Journal ArticleDOI
Phase sequence of silicide formation at metal-silicon interfaces
TL;DR: In this article, an effective heat of formation rule is formulated for predicting the sequence in which silicide phases form in metal-silicon binary systems, and the results show that in the presence of very small amounts of Au at the Si-Co interface, CoSi 2 is the first phase to form instead of Co 2 Si.
Journal ArticleDOI
Dominant diffusing species during cobalt silicide formation
C. M. Comrie,R. T. Newman +1 more
TL;DR: The dominant moving species during cobalt monosilicide and cobalt disilicide formation has been examined using a thin tantalum layer as a metal marker in this article, where the marker data obtained following the formation of CoSi from Co2Si showed that cobalt growth was essentially due Si diffusion only.
Journal ArticleDOI
Phase separations of amorphous CoW films during oxidation and reactions with Si and Al
S. Q. Wang,J. W. Mayer +1 more
TL;DR: In this article, the phase separations were found in all the reactions and a compound formed is Co7 W6, which is CoSi2 in Si/CoW, Co2 Al9 in CoW/Al, and Co3 O4 in Co55 W45 with air.
Journal ArticleDOI
Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time
Dries Smeets,Jelle Demeulemeester,K. De Keyser,Davy Deduytsche,Christophe Detavernier,C.M. Comrie,CC Theron,Christian Lavoie,André Vantomme +8 more
TL;DR: In this article, the growth kinetics of ternary Co1−xNixSi2 thin films were studied in real time using the "Kissinger" method applied to the results of ramped sheet resistance measurements to extract the apparent activation energy for the growth process.
References
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Silicides for VLSI applications
TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.
Journal ArticleDOI
Refractory silicides for integrated circuits
TL;DR: In this paper, various properties and the formation techniques of transition metal silicides have been reviewed and relations between the various properties of the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications.
Journal ArticleDOI
First phase nucleation in silicon–transition‐metal planar interfaces
R. M. Walser,R. W. Bené +1 more
TL;DR: In this article, the first compound nucleated in planar binary reaction couples is the most stable congruently melting compound adjacent to the lowest temperature eutectic on the bulk equilibrium phase diagram.
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Review of binary alloy formation by thin film interactions
TL;DR: In this article, the formation and properties of binary compounds made by thin-film interactions at temperatures well below the melting point of the various components were studied and it was suggested that the processes occurring at the interfaces control the phase formed.