Journal ArticleDOI
Crystal growth considerations in the use of “solar grade” silicon
Richard H. Hopkins,R.G. Seidensticker,J. R. Davis,P. Rai-Choudhury,P.D. Blais,J.R. McCormick +5 more
TLDR
In this paper, the problem of determining the maximum tolerable impurity concentration in solar grade silicon was analyzed using data on relative solar cell efficiency as a function of metallic impurity concentrations and the effective segregation coefficients for Czochralski growth.About:
This article is published in Journal of Crystal Growth.The article was published on 1977-12-01. It has received 61 citations till now. The article focuses on the topics: Solar cell & Solar cell efficiency.read more
Citations
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Journal ArticleDOI
Transition metals in silicon
TL;DR: In this paper, a review on the diffusion, solubility and electrical activity of 3D transition metals in silicon is given, which can be divided into two groups according to the respective enthalpy of formation of the solid solution.
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A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs
Alan Goodrich,Peter Hacke,Qi Wang,Bhushan Sopori,Robert Margolis,Ted James,Michael Woodhouse +6 more
TL;DR: In this paper, a detailed analysis of manufacturing costs for each step within the wafer-based monocrystalline silicon (c-Si) PV module supply chain is presented.
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Refining of metallurgical silicon by directional solidification
TL;DR: In this paper, the mold velocity out of the hot zone of the furnace changed from one experiment to another in the range between 5 and 110μm−s−1, and the results showed that the bottom and middle of the ingots are purer than the corresponding metallurgical silicon from which they solidified.
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Effect of titanium, copper and iron on silicon solar cells
TL;DR: The effect of Ti, Cu and Fe on silicon solar cells has been investigated in this article, where the authors found that the active center density of both Ti and Fe is only a very small fraction of the total impurity content in the starting silicon wafer.
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Silicon ribbon growth by the dendritic web process
TL;DR: In this article, it was shown that higher growth output rates can be achieved by controlling the thermal profiles in the web itself and in the melt from which the crystal grows, resulting in an enhancement in the dissipation of latent heat and a reduction in stress within the crystals.
References
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Journal ArticleDOI
Stability of a Planar Interface During Solidification of a Dilute Binary Alloy
W. W. Mullins,R. F. Sekerka +1 more
TL;DR: In this article, the stability of a moving planar liquid-solid interface during unidirectional freezing of a dilute binary alloy is theoretically investigated by calculating the time dependence of the amplitude of a sinusoidal perturbation of infinitesimal amplitude introduced into the planar shape.
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Germanium and silicon liquidus curves
C. D. Thurmond,M. Kowalchik +1 more
TL;DR: In this paper, the solubility of germanium and silicon in liquid gallium, thallium, tin, arsenic, bismuth, cadmium and zinc was reported.
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Constitutional supercooling during crystal growth from stirred melts—I. Theoretical
TL;DR: In this article, the theory of constitutional supercooling is applied to the case of crystal growth from a stirred melt and expressions, applicable to crystal growth using the Czochralski technique, are derived which predict the onset of the constitutional super cooling and the magnitude of the super cooling when it exists.
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Maximum growth rates for melt‐grown ribbon‐shaped crystals
TL;DR: In this paper, the authors derived an expression for the maximum growth rate of melt-grown ribbon-shaped crystals for a given material and a large width-to-thickness ratio.